參數(shù)資料
型號: DBFF300R12KE330
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 1/8頁
文件大?。?/td> 147K
代理商: DBFF300R12KE330
I
C, nom
I
C
300
480
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Kollektor Emitter Reststrom
collector emitter cut off current
prepared by: MOD -D2; Mark Münzer
revision: 3.0
-
-
V
GES
V
CES
300
I
CRM
600
+/- 20
C
ies
A
-
-
-
-
2,8
5,0
5,8
21
2,5
Technische Information / technical information
FF300R12KE3
IGBT-Module
IGBT-Modules
Periodischer Spitzenstrom
repetitive peak forward current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
Transistor Wechselrichter / transistor inverter
date of publication: 2002-10-02
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 300A, V
GE
= 15V, T
vj
= 25°C
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
kV
1200
V
Elektrische Eigenschaften / electrical properties
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
T
c
= 25°C
Kollektor Dauergleichstrom
DC collector current
T
vj
= 25°C
reverse transfer capacitance
Rückwirkungskapazitt
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
I
C
= 300A, V
GE
= 15V, T
vj
= 125°C
Gate Schwellenspannung
gate threshold voltage
I
C
= 12mA, V
CE
= V
GE
, T
vj
= 25°C
V
-
A
-
T
c
= 25°C; Transistor
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
Dauergleichstrom
DC forward current
I
F
I
FRM
t
p
= 1ms
W
A
P
tot
1470
Grenzlastintegral
I2t value
V
GE(th)
I2t
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
600
mA
-
μC
19
k A2s
6,5
V
nF
nF
gate charge
V
GE
= -15V...+15V
Q
G
C
res
-
0,85
400
nA
Gate Emitter Reststrom
gate emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
5
1/8
DB_FF300R12KE3_3.0
2002-10-02
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