| 型號(hào) | 廠商 | 描述 |
| hn2s01f 2 |
Toshiba Corporation | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) |
| hn2s02fu 2 3 4 |
Toshiba Corporation | High Speed Switching Application |
| hn2s02je 2 3 |
Toshiba Corporation | High-speed Switching Applications |
| hn2s03fe 2 3 |
Toshiba Corporation | High Speed Switching Applications |
| hn2s03fu 2 3 |
Toshiba Corporation | High Speed Switching Application |
| hn2s03t 2 |
Toshiba Corporation | High Speed Switching Application |
| hn2s05fu 2 3 |
Toshiba Corporation | High-Speed Switching Applications |
| hn2v02ha |
ARRAY OF INDEPENDENT DIODES|SO | |
| hn2v02hb |
ARRAY OF INDEPENDENT DIODES|SO | |
| hn2v02h |
Toshiba Corporation | OPTOISOLATOR 1CH DARL OUT 4-DIP |
| hn327 2 3 4 5 |
Semtech Corporation | PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
| hn328 2 3 4 5 |
Semtech Corporation | PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
| hn337 2 3 4 5 |
Semtech Corporation | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
| hn338 2 3 4 5 |
Semtech Corporation | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
| hn3903 2 3 |
Semtech Corporation | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
| hn3904 2 3 |
Semtech Corporation | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
| hn3905 2 3 |
Semtech Corporation | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
| hn3906 2 3 |
Semtech Corporation | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
| hn3b01f 2 3 4 5 |
Toshiba Corporation | RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 0.95V-vf 35ns 10uA-ir DO-41 5K/REEL-13 |
| hn3b02fu 2 3 |
Toshiba Corporation | TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process) |
| hn3c01fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS) |
| hn3c01f |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS) |
| hn3c02fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF CONVERTER, UHF RF AMPLIFIER APPLICATIONS) |
| hn3c02f |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, CONVERTER APPLICATIONS) |
| hn3c03fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF CONVERTER, UHF RF AMPLIFIER APPLICATIONS) |
| hn3c03f |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, CONVERTER APPLICATIONS) |
| hn3c09fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c09f |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c10ft 2 |
Toshiba Corporation | VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| hn3c10fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c10f |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c11fu |
Toshiba Corporation | EMITTER IR 940NM CLEAR SIDE LOOK |
| hn3c11f |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c12 |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c12f |
Toshiba Corporation | EMITTER IR 5MM 940NM CLEAR 40DEG |
| hn3c12fu |
Toshiba Corporation | EMITTER IR 5MM 940NM CLR HI PWR |
| hn3c13fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c13f |
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 30MA I(C) | TSOP | |
| hn3c15f |
Bottom entry type connector, Two-piece connector; HRS No: 547-0250-2 00; No. of Positions: 24; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm | |
| hn3c16f |
TRANSISTOR | BJT | PAIR | NPN | 7V V(BR)CEO | 15MA I(C) | TSOP | |
| hn3c17f |
TRANSISTOR | BJT | PAIR | NPN | 5V V(BR)CEO | 20MA I(C) | TSOP | |
| hn3c18f |
TRANSISTOR | BJT | PAIR | NPN | 5V V(BR)CEO | 10MA I(C) | SOT-363 | |
| hn3c14 |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c14fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c15fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c16ft 2 |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c16fu 2 |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c17fu |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c18ft 2 |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| hn3c18fu 2 |
Toshiba Corporation | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |