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參數(shù)資料
| 型號： | HN3C12 |
| 廠商： | Toshiba Corporation |
| 英文描述： | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 中文描述： | 瑞展型（甚高頻?超高頻波段低噪聲放大器應(yīng)用） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 90K |
| 代理商： | HN3C12 |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN3C12F | EMITTER IR 5MM 940NM CLEAR 40DEG |
| HN3C12FU | EMITTER IR 5MM 940NM CLR HI PWR |
| HN3C13FU | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN3C13F | TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 30MA I(C) | TSOP |
| HN3C15F | Bottom entry type connector, Two-piece connector; HRS No: 547-0250-2 00; No. of Positions: 24; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2.54; Terminal Pitch (mm): 2.54; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Double row; Board to board:2.54 to 5.5mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN3C12F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN3C12FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN3C13F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 30MA I(C) | TSOP |
| HN3C13FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| HN3C14 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
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