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參數(shù)資料
| 型號： | D1210 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 16K |
| 代理商： | D1210 |
D1210UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 12.5V
f = 175MHz
V
DS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
I
DQ
= 0.4A
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
40
1
1
7
0.5
0.8
10
50
20:1
60
40
4
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 3.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D1210UK | METAL GATE RF SILICON FET |
| D1211UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(10W-12.5V-500MHz,單端式)) |
| D1211 | METAL GATE RF SILICON FET |
| D1211UK | METAL GATE RF SILICON FET |
| D1212UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(100W-12.5V-500MHz,推挽式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D1210_13 | 制造商:CRYDOM 制造商全稱:Crydom Inc., 功能描述:panel mount |
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