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參數資料
| 型號： | D1204UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(30W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(30W-12.5V-500MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（功率30W - 12.5V - 500MHz的單端）（鍍金多用的DMOS射頻硅場效應管（功率30W - 12.5V - 500MHz的單端式）） |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 14K |
| 代理商： | D1204UK |
D1204UK
Prelim. 1/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 30W
V
DS
= 12.5V
f = 500MHz
V
DS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
I
DQ
= 0.6A
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
40
1
3
7
0.5
1.2
10
50
20:1
180
120
12
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 1.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
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|---|---|
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| D1207 | METAL GATE RF SILICON FET |
| D1207UK | METAL GATE RF SILICON FET |
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