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參數(shù)資料
| 型號： | D1207 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | D1207 |
D1207UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
175W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
C
A
O
N
M
K
J
I
H
G
F
E
D
B
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
mm
16.38
1.52
45°
6.35
3.30
14.22
1.27 x 45°
1.52
6.35
0.13
2.16
1.52
5.08
18.90
Tol.
0.26
0.13
5°
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5°
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
DQ
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
PIN 2
PIN 4
DRAIN 1
GATE 2
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