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參數(shù)資料
| 型號： | D1203UK |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC, DM, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | D1203UK |
D1203UK
Prelim. 10/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
117W
40V
±20V
15A
–65 to 150°C
200°C
MECHANICAL DATA
A
M
F
E
D
C
B
I
H
K
J
G
1
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
USEFUL P
O
AT 1GHz
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DM
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17 Dia
5.71
12.7 Dia
6.60
0.13
4.32
3.17
26.16
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia
0.225
0.500 Dia
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
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| D1207 | METAL GATE RF SILICON FET |
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|---|---|
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