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參數(shù)資料
| 型號(hào)： | CYU01M16SFE |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 16-Mbit (1M x 16) Pseudo Static RAM |
| 中文描述： | 16兆位（1米× 16）偽靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 503K |
| 代理商： | CYU01M16SFE |
CYU01M16SFE
MoBL3
Document #: 38-05603 Rev. *E
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential.–0.2V to V
CCMAX
+ 0.3V
DC Voltage Applied to Outputs
in High Z State
[5, 6, 7]
........................–0.2V to V
CCMAX
+ 0.3V
DC Input Voltage
[5, 6, 7]
....................–0.2V to V
CCMAX
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current....................................................> 200 mA
Device
Range
Industrial
Operating
Temperature (T
A
)
–40°C to +85°C
V
CC
1.7V to
1.95V
CYU01M16SFE
DC Electrical Characteristics
(Over the Operating Range)
[5, 6, 7]
Parameter
V
CC
V
OH
Description
Supply Voltage
Output HIGH Voltage I
OH
= –0.1 mA
Test Conditions
CYU01M16SFE-70 ns
Min.
Typ.
[4]
1.7
1.8
V
CC
– 0.2
Unit
V
V
Max.
1.95
V
CC
= 1.7V to 1.95V
V
OL
Output LOW Voltage I
OL
= 0.1 mA
V
CC
= 1.7V to 1.95V
V
CC
= 1.7V to 1.95V
V
CC
= 1.7V to 1.95V
GND < V
IN
< V
CC
0.2
V
V
IH
V
IL
I
IX
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply
Current
0.8 * V
CC
–0.2
–1
V
CC
+ 0.3V
0.2 * V
CC
+1
V
V
μ
A
I
OZ
GND < V
OUT
< V
CC
–1
+1
μ
A
I
CC
f = f
MAX
=
1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
18
20
mA
f = 1 MHz
CE
1
> V
CC
– 0.2V, CE
2
< 0.2V, V
IN
>
V
CC
– 0.2V, V
IN
< 0.2V f = f
MAX
(Address and Data Only), f = 0
(OE, WE, BHE and BLE), V
CC
= 3.60V
CE
1
> V
CC
– 0.2V, CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CCMAX
3
5
70
mA
μ
A
I
SB1
Automatic CE
Power-Down
Current — CMOS
Inputs
Automatic CE
Power-Down
Current — CMOS
Inputs
55
I
SB2
55
70
μ
A
Capacitance
[8]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
Thermal Resistance
[8]
Parameter
Θ
JA
Θ
JC
Description
Test Conditions
VFBGA
56
11
Unit
°
C/W
°
C/W
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Test conditions follow standard test methods
and procedures for measuring thermal
impedence, per EIA/JESD51.
Notes:
5. V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
6. V
= V
+ 0.5V for pulse durations less than 20 ns.
7. Overshoot and undershoot specifications are characterized and are not 100% tested.
8. Tested initially and after any design or process changes that may affect these parameters.
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