參數(shù)資料
型號(hào): CYU01M16SFE
廠(chǎng)商: Cypress Semiconductor Corp.
英文描述: 16-Mbit (1M x 16) Pseudo Static RAM
中文描述: 16兆位(1米× 16)偽靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 11/11頁(yè)
文件大小: 503K
代理商: CYU01M16SFE
CYU01M16SFE
MoBL3
Document #: 38-05603 Rev. *E
Page 11 of 11
Document History Page
Document Title: CYU01M16SFE MoBL3
TM
16-Mbit (1M x 16) Pseudo Static RAM
Document Number: 38-05603
Orig. of
Change
**
342199
See ECN
PCI
*A
386551
See ECN
PCI
REV.
ECN NO.
Issue Date
Description of Change
New Data sheet
Changed from Advance to Preliminary
Replaced TBDs with appropriate values
Changed t
PC
and t
PA
from 20 to 25 ns
Corrected footnote # 16 as OE = CE
1
= V
IL
and CE
2 =
V
IH
Added separate waveforms for CE
1
and CE
2
in Read #2, Page Read and
Write#1 Timing diagram
Removed the 55-ns Speed Bin
Changed Isb2 Max value from 60
μ
A to 70
μ
A
Added Isb1 to the DC parameters
Added Chip Enable Access Foot Note to AC Parameters
Changed the t
CD
Min value from 5 ns to 15 ns
Changed the Page Mode Values (t
PC
and t
PAA
) from 25 ns to 35 ns
Revised MPN from CYU01M16SFCU to CYU01M16SFE
Renamed Package Name column with Package Diagram
Removed Page Mode feature
Converted from Preliminary to Final
Changede I
CC
(Max) from 25 mA to 20 mA
Changed t
OHA
(Min) from 5 ns to 10 ns
*B
422623
See ECN
HRT
*C
462289
See ECN
NXR
*D
*E
492939
504021
See ECN
See ECN
NXR
NXR
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