參數(shù)資料
型號(hào): CYU01M16SFE
廠商: Cypress Semiconductor Corp.
英文描述: 16-Mbit (1M x 16) Pseudo Static RAM
中文描述: 16兆位(1米× 16)偽靜態(tài)存儲(chǔ)器
文件頁數(shù): 2/11頁
文件大小: 503K
代理商: CYU01M16SFE
CYU01M16SFE
MoBL3
Document #: 38-05603 Rev. *E
Page 2 of 11
Power-up Characteristics
The initialization sequence is shown in the figure below. Chip
Select should be CE
1
HIGH or CE
2
LOW for at least 200
μ
s
after V
CC
has reached a stable value. No access must be
attempted during this period of 200
μ
s.
Pin Configuration
[2, 3]
48-Ball VFBGA
Top View
WE
A
11
A
10
A
6
A
0
A
3
CE
1
I/O
10
I/O
8
I/O
9
A
4
A
5
I/O
11
I/O
13
I/O
12
I/O
14
I/O
15
V
SS
A
9
A
8
OE
V
SS
A
7
I/O
0
BHE
CE
2
A
17
A
2
A
1
BLE
V
CC
I/O
2
I/O
1
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
A
15
A
14
A
13
A
12
3
2
6
5
4
1
D
E
B
A
C
F
G
H
A
16
NC
V
CC
A
18
NC
A
19
Product Portfolio
[4]
Product
V
CC
Range (V)
Typ.
[4]
1.8
Speed
(ns)
Power Dissipation
Operating I
CC
(mA)
f = 1MHz
Typ.
[4]
Max.
3
5
Standby I
SB2
(
μ
A)
Typ.
[4]
55
f = f
max
CYU01M16SFE
Min.
1.7
Max.
1.95
Typ.
[4]
18
Max.
20
Max.
70
70
Parameter
Tpu
Description
Min.
200
Typ.
Max.
Unit
μ
s
Chip Enable Low After Stable V
CC
Notes:
2. Ball H6 and E3 can be used to upgrade to a 32-Mbit and a 64-Mbit density, respectively.
3. NC “no connect”-not connected internally to the die.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
(typ) and T
A
= 25°C. Tested initially
and after design changes that may affect the parameters.
Tpu
CE
1
V
CC
First Access
Stable Power
[+] Feedback
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