參數(shù)資料
型號: CY7C195B-15VC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 256 Kb (64K x 4) Static RAM
中文描述: 64K X 4 STANDARD SRAM, 15 ns, PDSO28
封裝: 8 X 18 MM, 3.50 MM HEIGHT, SOJ-28
文件頁數(shù): 5/13頁
文件大?。?/td> 256K
代理商: CY7C195B-15VC
CY7C194B
CY7C195B
Document #: 38-05409 Rev. *A
Page 5 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Operating Range
DC Electrical Characteristics
3
Capacitance
4
Parameter
T
STG
T
AMB
V
CC
V
CC
I
OUT
V
ESD
I
LU
Description
Value
Unit
°C
°C
V
V
mA
V
mA
Storage Temperature
Ambient Temperature with Power Applied (i.e. case temperature)
Core Supply Voltage Relative to V
SS
DC Voltage Applied to any Pin Relative to V
SS
Output Short-Circuit Current
Static Discharge Voltage (per MIL-STD-883, Method 3015)
Latch-up Current
–65 to +150
–55 to +125
–0.5 to +7.0
–0.5 to V
CC
+ null
20
> 2001
> 200
Range
Commercial
Ambient Temperature (T
A
)
0°C to 70°C
Voltage Range (V
CC
)
5.0V ± 10%
Parameter
V
IH
Description
Input HIGH Volt-
age
Input LOW Volt-
age
Output HIGH Volt-
age
Output LOW Volt-
age
V
CC
Operating
Supply Current
Automatic CE
Power-down Cur-
rent TTL Inputs
Automatic CE
Power-down Cur-
rent CMOS Inputs
Output Leakage
Current
Input Load Cur-
rent
Condition
12 ns
15 ns
25 ns
Unit
V
Min
2.2
Max
V
CC
+
0.3
0.8
Min
2.2
Max
V
CC
+
0.3
0.8
Min
2.2
Max
V
CC
+
0.3
0.8
V
IL
–0.3
–0.3
–0.5
V
V
OH
V
CC
= Min., loh = -4.0 ma
2.4
2.4
2.4
V
V
OL
V
CC
= Min., lol = 8.0 ma
0.4
0.4
0.4
V
I
CC
V
CC
= Max., I
OUT
= 0 mA, f =
F
MAX
= 1 / t
RC
V
CC
= Max., CE
V
IH
, V
IN
V
IH
or V
IN
V
IL
, f = F
MAX
90
80
80
mA
I
SB1
30
30
30
mA
I
SB2
V
CC
= Max., CE
V
CC
- 0.3v,
V
IN
> V
CC
- 0.3v or V
IN
0.3,f
= 0 Commercial
GND
Vi
V
CC
, Output Dis-
abled
GND
Vi
V
CC
10
10
10
mA
I
OZ
–5
+5
–5
+5
–5
+5
uA
I
IX
–5
+5
–5
+5
–5
+5
uA
Notes:
3. V
IL
(min) = –2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process change that may affect these parameters.
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Conditions
T
A
= 25C, f = 1 MHz,
V
CC
= 5.0V
Max
Unit
pF
ALL - PACKAGES
7
10
相關PDF資料
PDF描述
CY7C195B-25PC 256 Kb (64K x 4) Static RAM
CY7C194 64K x 4 Static RAM(64K x 4靜態(tài) RAM)
CY7C195 64K x 4 Static RAM(64K x 4靜態(tài) RAM)
CY7C196 64K x 4 Static RAM(64K x 4靜態(tài) RAM)
CY7C1992BV18 18-Mbit DDR-II SIO SRAM 2-Word(2字Burst結構,18-Mbit DDR-II SIO SRAM)
相關代理商/技術參數(shù)
參數(shù)描述
CY7C195B-25PC 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述:
CY7C196-20VC 制造商:Cypress Semiconductor 功能描述:
CY7C196-25VC 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C19635PC 制造商:CYPRESS 功能描述:*
CY7C19645PC 制造商:CYPRESS 功能描述:*