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參數(shù)資料
| 型號： | CY7C1520AV18-167BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| 中文描述： | 2M X 36 DDR SRAM, 0.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 11/28頁 |
| 文件大?。?/td> | 1133K |
| 代理商： | CY7C1520AV18-167BZC |
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PRELIMINARY
CY7C1516AV18
CY7C1527AV18
CY7C1518AV18
CY7C1520AV18
Document #: 001-06982 Rev. *B
Page 11 of 28
Write Cycle Descriptions
[3, 9]
(CY7C1520AV18)
BWS
0
L
BWS
1
L
BWS
2
L
BWS
3
L
K
K
–
Comments
L-H
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are
written into the device.
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are
written into the device.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is
written into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is
written into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is
written into the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is
written into the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is
written into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is
written into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is
written into the device. D
[26:0]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is
written into the device. D
[26:0]
will remain unaltered.
No data is written into the device during this portion of a Write operation.
No data is written into the device during this portion of a Write operation.
L
L
L
L
–
L-H
L
H
H
H
L-H
–
L
H
H
H
–
L-H
H
L
H
H
L-H
–
H
L
H
H
–
L-H
H
H
L
H
L-H
–
H
H
L
H
–
L-H
H
H
H
L
L-H
H
H
H
L
–
L-H
H
H
H
H
H
H
H
H
L-H
–
–
L-H
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1520AV18-167BZI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1520AV18-167BZXC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1520AV18-167BZXI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1520AV18-200BZC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1520AV18-200BZI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1520AV18-200BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 2M x 36 1.8V DDR II 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1520AV18-200BZCT | 功能描述:IC SRAM 72MBIT 200MHZ 165TFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| CY7C1520AV18-200BZI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1520AV18-200BZXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 2Mx36 1.8V DDR-II (2-Word Burst) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1520AV18-250BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 2M x 36 1.8V DDR II 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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