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參數(shù)資料
| 型號(hào)： | CY7C1518V18-300BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| 中文描述： | 4M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 17/28頁 |
| 文件大?。?/td> | 457K |
| 代理商： | CY7C1518V18-300BZC |
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CY7C1516V18
CY7C1527V18
CY7C1518V18
CY7C1520V18
Document #: 38-05563 Rev. *D
Page 17 of 28
Identification Register Definitions
Instruction
Field
Revision
Number (31:29)
Cypress Device
ID (28:12)
Cypress JEDEC
ID (11:1)
Value
Description
Version number.
CY7C1516V18
000
CY7C1527V18
000
CY7C1518V18
000
CY7C1520V18
000
11010100010000100
11010100010001100
11010100010010100 11010100010100100 Defines the type
of SRAM.
Allows unique
identification of
SRAM vendor.
Indicate the
presence of an
ID register.
00000110100
00000110100
00000110100
00000110100
ID Register
Presence (0)
1
1
1
1
Scan Register Sizes
Register Name
Instruction
Bypass
ID
Boundary Scan
Bit Size
3
1
32
109
Instruction Codes
Instruction
EXTEST
IDCODE
Code
000
001
Description
Captures the Input/Output ring contents.
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
Captures the Input/Output contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures the Input/Output ring contents. Places the boundary scan register between TDI and
TDO. Does not affect the SRAM operation.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1518V18-300BZI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518V18-300BZXC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518V18-300BZXI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1520V18-167BZC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1520V18-167BZI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1518XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1518YC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1518ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1520AV18-200BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1520AV18-200BZCT | 功能描述:IC SRAM 72MBIT 200MHZ 165TFBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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