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參數(shù)資料
| 型號： | CY7C1518AV18-278BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| 中文描述： | 4M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 6/28頁 |
| 文件大?。?/td> | 1133K |
| 代理商： | CY7C1518AV18-278BZXC |
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PRELIMINARY
CY7C1516AV18
CY7C1527AV18
CY7C1518AV18
CY7C1520AV18
Document #: 001-06982 Rev. *B
Page 6 of 28
Pin Definitions
Pin Name
DQ
[x:0]
I/O
Pin Description
Input/Output-
Synchronous
Data Input/Output signals
. Inputs are sampled on the rising edge of K and K clocks during valid
Write operations. These pins drive out the requested data during a Read operation. Valid data is
driven out on the rising edge of both the C and C clocks during Read operations or K and K when
in single clock mode. When read access is deselected, Q
[x:0]
are automatically tri-stated.
CY7C1516AV18
DQ
[7:0]
CY7C1527AV18
DQ
[8:0]
CY7C1518AV18
DQ
[17:0]
CY7C1520AV18
DQ
[35:0]
Synchronous Load
. This input is brought LOW when a bus cycle sequence is to be defined.
This definition includes address and Read/Write direction. All transactions operate on a burst of
2 data.
Nibble Write Select 0, 1
active LOW
(CY7C1516AV18 only)
.Sampled on the rising edge of
the K and K clocks during Write operations. Used to select which nibble is written into the device
during the current portion of the Write operations. Nibbles not written remain unaltered.
NWS
0
controls D
[3:0]
and NWS
1
controls D
[7:4]
.
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble
Write Select will cause the corresponding nibble of data to be ignored and not written into the
device.
Byte Write Select 0, 1, 2, and 3
active LOW
. Sampled on the rising edge of the K and K clocks
during Write operations. Used to select which byte is written into the device during the current
portion of the Write operations. Bytes not written remain unaltered.
CY7C1527AV18
BWS
0
controls D
[8:0]
CY7C1518AV18
BWS
0
controls D
[8:0]
and BWS
1
controls D
[17:9].
CY7C1520AV18
BWS
0
controls D
[8:0]
, BWS
1
controls D
[17:9]
, BWS
2
controls D
[26:18]
and BWS
3
controls D
[35:27]
.
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write
Select will cause the corresponding byte of data to be ignored and not written into the device.
Address Inputs
. These address inputs are multiplexed for both Read and Write operations.
Internally, the device is organized as 8M x 8 (2 arrays each of 4M x 8) for CY7C1516AV18 and
8M x 9 (2 arrays each of 4M x9) for CY7C1527AV18, a single 4M x 18 array for CY7C1518AV18,
and a single array of 2M x 36 for CY7C1520AV18.
CY7C1516AV18 – Since the least significant bit of the address internally is a “0,” only 22 external
address inputs are needed to access the entire memory array.
CY7C1527AV18 – Since the least significant bit of the address internally is a “0,” only 22 external
address inputs are needed to access the entire memory array.
CY7C1518AV18 – A0 is the input to the burst counter. These are incremented in a linear fashion
internally. 22 address inputs are needed to access the entire memory array.
CY7C1520AV18 – A0 is the input to the burst counter. These are incremented in a linear fashion
internally. 21 address inputs are needed to access the entire memory array. All the address inputs
are ignored when the appropriate port is deselected.
Synchronous Read/Write Input
. When LD is LOW, this input designates the access type (Read
when R/W is HIGH, Write when R/W is LOW) for loaded address. R/W must meet the set-up and
hold times around edge of K.
Positive Input Clock for Output Data
. C is used in conjunction with C to clock out the Read data
from the device. C and C can be used together to deskew the flight times of various devices on
the board back to the controller. See application example for further details.
Negative Input Clock for Output Data
. C is used in conjunction with C to clock out the Read
data from the device. C and C can be used together to deskew the flight times of various devices
on the board back to the controller. See application example for further details.
Positive Input Clock Input
. The rising edge of K is used to capture synchronous inputs to the
device and to drive out data through Q
[x:0]
when in single clock mode. All accesses are initiated
on the rising edge of K.
Negative Input Clock Input
. K is used to capture synchronous data being presented to the device
and to drive out data through Q
[x:0]
when in single clock mode.
LD
Input-
Synchronous
NWS
0
, NWS
1
Input-
Synchronous
BWS
0
, BWS
1
,
BWS
2
, BWS
3
Input-
Synchronous
A, A0
Input-
Synchronous
R/W
Input-
Synchronous
C
Input-
Clock
C
Input-
Clock
K
Input-
Clock
K
Input-
Clock
[+] Feedback
相關(guān)PDF資料 |
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| CY7C1518AV18-278BZXI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518AV18-300BZC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518AV18-300BZI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518AV18-300BZXC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518AV18-300BZXI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1518BC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1518JV18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR-II 靜態(tài)隨機存取存儲器 (TWO-WRD BURST) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1518JV18-300BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR-II (2-Word Burst) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1518JV18-300BZXC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR-II (2-Word Burst) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1518JV18-312BZC | 功能描述:IC SRAM 4MX18 DDRII 165-FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
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