- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379077 > CY7C1475V25-100BGI (CYPRESS SEMICONDUCTOR CORP) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1475V25-100BGI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| 中文描述： | 1M X 72 ZBT SRAM, 8.5 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209 |
| 文件頁(yè)數(shù)： | 22/32頁(yè) |
| 文件大小： | 928K |
| 代理商： | CY7C1475V25-100BGI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)當(dāng)前第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *I
Page 22 of 32
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
100 TQFP
Max.
165 FBGA
Max.
209 FBGA
Max.
Unit
C
ADDRESS
C
DATA
C
CTRL
C
CLK
C
IO
Address Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
DD
= 2.5V
V
DDQ
= 2.5V
6
6
6
pF
Data Input Capacitance
5
5
5
pF
Control Input Capacitance
8
8
8
pF
Clock Input Capacitance
6
6
6
pF
Input-Output Capacitance
5
5
5
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
100 TQFP
Package
165 FBGA
Package
209 FBGA
Package
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow
standard test methods
and procedures for
measuring thermal
impedance, according to
EIA/JESD51.
24.63
16.3
15.2
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case)
2.28
2.1
1.7
°
C/W
AC Test Loads and Waveforms
OUTPUT
R = 1667
R = 1538
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.25V
2.5V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
2.5V IO Test Load
OUTPUT
R = 14 K
R = 14 K
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 0.9V
1.8V
ALL INPUT PULSES
V
DDQ
– 0.2
0.2
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
1.8V IO Test Load
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1475V25-100BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-133BGI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-133BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25 | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) |
| CY7C1473V25 | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1475V33-100AXC | 制造商:Cypress Semiconductor 功能描述:72MB (1MBX72) NOBL FLOW-THRU, 3.3V CORE, 2.5/3.3V I/O - Bulk |
| CY7C1475V33-100BGC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 72MBIT 1MX72 8.5NS 209FBGA - Bulk |
| CY7C1475V33-133BGC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC OCTAL 3.3V 72MBIT 1MX72 6.5NS 209FBGA - Bulk |
| CY7C14802BC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C14802XC | 制造商:Cypress Semiconductor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。