參數(shù)資料
型號： CY7C1471V33-100BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述： 2M X 36 ZBT SRAM, 8.5 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, FBGA-165
文件頁數(shù)： 11/29頁
文件大?。?/td> 375K
代理商： CY7C1471V33-100BZC
PRELIMINARY
CY7C1471V33
CY7C1473V33
CY7C1475V33
Document #: 38-05288 Rev. *E
Page 11 of 29
Write Cycle (Continue Burst)
NOP/Write Abort (Begin Burst)
Write Abort (Continue Burst)
Ignore Clock Edge (Stall)
Sleep Mode
Next
None
Next
Current
None
X
L
X
X
X
X
H
X
X
X
X
L
X
X
X
L
L
L
L
H
H
L
H
X
X
X
L
X
X
X
L
H
H
X
X
X
X
X
X
X
L
L
L
H
X
L->H
L->H
L->H
L->H
X
Data In (D)
Tri-State
Tri-State
-
Tri-State
Truth Table for Read/Write
[2, 3, 9]
Function (CY7C1471V33)
WE
H
L
L
L
L
L
L
BW
A
X
H
L
H
H
H
L
BW
B
X
H
H
L
H
H
L
BW
C
X
H
H
H
L
H
L
BW
D
X
H
H
H
H
L
L
Read
Write No bytes written
Write Byte A – (DQ
A
and DQP
A
)
Write Byte B – (DQ
B
and DQP
B
)
Write Byte C – (DQ
C
and DQP
C
)
Write Byte D – (DQ
D
and DQP
D
)
Write All Bytes
Truth Table for Read/Write
[2, 3, 9]
Function (CY7C1473V33)
WE
H
L
L
L
L
BW
B
X
H
H
L
L
BW
A
X
H
L
H
L
Read
Write – No Bytes Written
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Both Bytes
Truth Table for Read/Write
[2, 3, 9]
Function (CY7C1475V33)
WE
H
L
L
L
BW
x
X
H
L
Read
Write – No Bytes Written
Write Byte X
(DQ
x
and
DQP
x)
Write All Bytes
All BW = L
Note:
9. Table only lists a partial listing of the byte write combinations. Any Combination of BW
X
is valid Appropriate write will be done based on which byte write is active.
Truth Table
(continued)
[2, 3, 4, 5, 6, 7, 8]
Operation
Address
Used
CE
1
CE
2
CE
3
ZZ
ADV/LD
WE
BW
X
OE
CEN
CLK
DQ
相關PDF資料
PDF描述
CY7C1471V33-100BZXC LME Series; Mounting Style: Direct mount; Functions: Continuous light; Light Type: LED; Rated Voltage: 24V AC/DC; Style: 2 - light; Color: Red, Green (other color combo avail); Diameter: 60; Applicable Model: LME
CY7C1471V33-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V33-100AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1474V33-250BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
CY7C1474V33-250BGXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
相關代理商/技術參數(shù)
參數(shù)描述
CY7C1471V33-117AXC 功能描述:靜態(tài)隨機存取存儲器 2Mx36 3.3V NoBL FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1471V33-117AXCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 8.5NS 100TQFP - Bulk
CY7C1471V33-133AC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 6.5NS 100TQFP - Bulk
CY7C1471V33-133ACES 制造商:Cypress Semiconductor 功能描述:
CY7C1471V33-133AXC 功能描述:靜態(tài)隨機存取存儲器 72MB (2Mx36) 3.3v 133MHz 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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