參數(shù)資料
型號(hào): CY7C1411AV18-278BZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
中文描述: 4M X 8 QDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù): 26/28頁(yè)
文件大小: 1143K
代理商: CY7C1411AV18-278BZC
CY7C1411AV18
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
Document Number: 38-05614 Rev. *C
Page 26 of 28
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CY7C1426AV18-250BZXI
CY7C1413AV18-250BZXI
CY7C1415AV18-250BZXI
CY7C1411AV18-278BZC
CY7C1426AV18-278BZC
CY7C1413AV18-278BZC
CY7C1415AV18-278BZC
CY7C1411AV18-278BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-278BZXC
CY7C1413AV18-278BZXC
CY7C1415AV18-278BZXC
CY7C1411AV18-278BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-278BZI
CY7C1413AV18-278BZI
CY7C1415AV18-278BZI
CY7C1411AV18-278BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-278BZXI
CY7C1413AV18-278BZXI
CY7C1415AV18-278BZXI
CY7C1411AV18-300BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-300BZC
CY7C1413AV18-300BZC
CY7C1415AV18-300BZC
CY7C1411AV18-300BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-300BZXC
CY7C1413AV18-300BZXC
CY7C1415AV18-300BZXC
CY7C1411AV18-300BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-300BZI
CY7C1413AV18-300BZI
CY7C1415AV18-300BZI
CY7C1411AV18-300BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-300BZXI
CY7C1413AV18-300BZXI
CY7C1415AV18-300BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
278
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
Industrial
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Commercial
Industrial
Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered.
Speed
(MHz)
Ordering Code
Diagram
Package
Package Type
Operating
Range
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相關(guān)PDF資料
PDF描述
CY7C1411AV18-278BZI 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1411AV18-278BZXC 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1411AV18-278BZXI 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1411AV18-300BZC 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1411AV18-300BZI 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
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CY7C1411BV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1411KV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36Mb QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1411KV18-300BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (4Mx8) 1.8v 300MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1411SC 制造商:Cypress Semiconductor 功能描述:
CY7C1411SV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 NV靜態(tài)隨機(jī)存取存儲(chǔ)器 250 MHz 1.8V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray