參數(shù)資料
型號: CY7C1372C-167AI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
中文描述: 1M X 18 ZBT SRAM, 3.4 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁數(shù): 9/27頁
文件大小: 704K
代理商: CY7C1372C-167AI
CY7C1370C
CY7C1372C
Document #: 38-05233 Rev. *D
Page 9 of 27
NOP/WRITE ABORT (Begin Burst)
WRITE ABORT (Continue Burst)
IGNORE CLOCK EDGE (Stall)
SNOOZE MODE
None
Next
Current
None
L
X
X
X
L
L
L
H
L
H
X
X
L
X
X
X
H
H
X
X
X
X
X
X
L
L
H
X
L-H
L-H
L-H
X
Three-State
Three-State
Three-State
Truth Table
[1, 2, 3, 4, 5, 6, 7]
(continued)
Operation
Address
Used
CE
ZZ
ADV/LD
WE
BW
x
OE
CEN
CLK
DQ
Partial Write Cycle Description
[1, 2, 3, 8]
Function (CY7C1370C)
WE
H
BW
d
X
BW
c
X
BW
b
X
BW
a
X
Read
Write – No bytes written
L
H
H
H
H
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Bytes b, a
L
H
H
H
L
L
H
H
L
H
L
H
H
L
L
Write Byte c – (DQ
c
and
DQP
c
)
Write Bytes c, a
L
H
L
H
H
L
H
L
H
L
Write Bytes c, b
L
H
LL
L
H
Write Bytes c, b, a
L
H
L
L
L
Write Byte d – (DQ
d
and
DQP
d
)
Write Bytes d, a
L
L
H
H
H
L
L
H
H
L
Write Bytes d, b
L
L
H
L
H
Write Bytes d, b, a
L
L
H
L
L
Write Bytes d, c
L
L
L
H
H
Write Bytes d, c, a
L
L
L
H
L
Write Bytes d, c, b
L
L
L
L
H
Write All Bytes
L
L
L
L
L
Function (CY7C1372C)
WE
H
L
L
L
L
BW
b
x
H
H
L
L
BW
a
x
H
L
H
L
Read
Write – No Bytes Written
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Both Bytes
Note:
8. Table only lists a partial listing of the byte write combinations. Any combination of BW
[a:d]
is valid. Appropriate write will be done based on which byte write is active.
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