參數(shù)資料
型號： CY7C1370D-250BGI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
中文描述： 512K X 36 ZBT SRAM, 2.6 ns, PBGA119
封裝： (14 X 22 X 2.4) MM, PLASTIC, BGA-119
文件頁數(shù)： 20/30頁
文件大?。?/td> 344K
代理商： CY7C1370D-250BGI
PRELIMINARY
CY7C1370D
CY7C1372D
Document #: 38-05555 Rev. *A
Page 20 of 30
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +4.6V
DC to Outputs in Tri-State................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C 3.3V–5%/+10% 2.5V –5% to
–40°C to +85°C
V
DD
V
DDQ
V
DD
Electrical Characteristics
Over the Operating Range
[16, 17]
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
2.625
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 1.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
≤
V
I
≤
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
[16]
2.0
1.7
–0.3
–0.3
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[16]
I
X
Input Load Current
except ZZ and MODE
Input Current of MODE Input = V
SS
–5
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
30
Input Current of ZZ
–30
5
5
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
–5
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
350
325
300
275
160
TBD
150
140
70
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX
=
1/t
CYC
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = 0
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = f
MAX
= 1/t
CYC
I
SB3
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
135
TBD
130
125
mA
mA
mA
mA
Shaded areas contain advance information.
Notes:
16.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC)> –2V (Pulse width less than t
CYC
/2).
17.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
相關(guān)PDF資料
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CY7C1370D-250BZC 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1370D-250BZC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 2.6NS 165FBGA - Bulk
CY7C1370DV25-167 制造商:Cypress Semiconductor 功能描述:
CY7C1370DV25-167AXC 功能描述:靜態(tài)隨機存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1370DV25-167AXCT 功能描述:靜態(tài)隨機存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1370DV25-167AXI 功能描述:靜態(tài)隨機存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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