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參數(shù)資料
| 型號： | CY7C1370D-250BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| 中文描述： | 512K X 36 ZBT SRAM, 2.6 ns, PBGA165 |
| 封裝： | (13 X 15 X 1.4) MM, PLASTIC, FBGA-165 |
| 文件頁數(shù)： | 1/30頁 |
| 文件大?。?/td> | 344K |
| 代理商： | CY7C1370D-250BZC |
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PRELIMINARY
18-Mbit (512K x 36/1M x 18) Pipelined
SRAM with NoBL Architecture
CY7C1370D
CY7C1372D
Cypress Semiconductor Corporation
Document #: 38-05555 Rev. *A
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised October 12, 2004
Features
Pin-compatible and functionally equivalent to ZBT
Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 225, 200, and
167 MHz
Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
Fully registered (inputs and outputs) for pipelined
operation
Byte Write capability
Single 3.3V power supply
3.3V/2.5V I/O power supply
Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 167-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
Available in lead-Free 100 TQFP, 119 BGA, and 165 fBGA
packages
IEEE 1149.1 JTAG Boundary Scan
Burst capability—linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1370D and CY7C1372D are 3.3V, 512K x 36 and
1 Mbit x 18 Synchronous pipelined burst SRAMs with No Bus
Latency (NoBL
)
logic, respectively. They are designed to
support unlimited true back-to-back Read/Write operations
with no wait states. The CY7C1370D and CY7C1372D are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The CY7C1370D and CY7C1372D are
pin compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BW
a
–BW
d
for CY7C1370D and BW
a
–BW
b
for CY7C1372D)
and a Write Enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
A0, A1, A
C
MODE
BW
a
BW
b
BW
c
BW
d
WE
CE1
CE2
CE3
OE
READ LOGIC
DQs
DQP
a
DQP
b
DQP
c
DQP
d
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
ARRAY
E
E
INPUT
REGISTER 0
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BURST
LOGIC
A0'
A1'
D1
D0
Q1
Q0
A0
A1
C
ADV/LD
ADV/LD
E
INPUT
REGISTER 1
S
E
N
S
E
A
M
P
S
E
CLK
CEN
WRITE
DRIVERS
ZZ
SLEEP
CONTROL
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
Logic Block Diagram-CY7C1370D (512K x 36)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1370D-250BZI | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D-167AXC | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D-167AXI | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D-167BGC | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1370DV25-167 | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1370DV25-167AXC | 功能描述:靜態(tài)隨機存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1370DV25-167AXCT | 功能描述:靜態(tài)隨機存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1370DV25-167AXI | 功能描述:靜態(tài)隨機存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1370DV25-167AXIT | 功能描述:IC SRAM 18MBIT 167MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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