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參數(shù)資料
| 型號： | CY7C1370D-250BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| 中文描述： | 512K X 36 ZBT SRAM, 2.6 ns, PBGA165 |
| 封裝： | (13 X 15 X 1.4) MM, PLASTIC, FBGA-165 |
| 文件頁數(shù)： | 29/30頁 |
| 文件大?。?/td> | 344K |
| 代理商： | CY7C1370D-250BZC |
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PRELIMINARY
CY7C1370D
CY7C1372D
Document #: 38-05555 Rev. *A
Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 29 of 30
ZBT is a trademark of Integrated Device Technology. NoBL and No Bus Latency are trademarks of Cypress Semiconductor
Corporation. All products and company names mentioned in this document may be the trademarks of their respective holders.
Package Diagrams
(continued)
51-85180-**
165 FBGA 13 x 15 x 1.40 MM BB165D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1370D-250BZI | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D-167AXC | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D-167AXI | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
| CY7C1372D-167BGC | 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1370DV25-167 | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1370DV25-167AXC | 功能描述:靜態(tài)隨機(jī)存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1370DV25-167AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1370DV25-167AXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1370DV25-167AXIT | 功能描述:IC SRAM 18MBIT 167MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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