參數(shù)資料
型號: CY7C1370D-250BGC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
中文描述: 512K X 36 ZBT SRAM, 2.6 ns, PBGA119
封裝: (14 X 22 X 2.4) MM, PLASTIC, BGA-119
文件頁數(shù): 23/30頁
文件大小: 344K
代理商: CY7C1370D-250BGC
PRELIMINARY
CY7C1370D
CY7C1372D
Document #: 38-05555 Rev. *A
Page 23 of 30
Switching Waveforms
Read/Write/Timing
[25, 26, 27]
Notes:
25.For this waveform ZZ is tied LOW.
26.When CE is LOW, CE
is LOW, CE
is HIGH and CE
is LOW. When CE is HIGH,CE
is HIGH or CE
is LOW or CE
is HIGH.
27.Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.
WRITE
D(A1)
1
2
3
4
5
6
7
8
9
CLK
tCYC
t
CL
t
CH
10
CE
t
CEH
t
CES
WE
CEN
t
CENH
t
CENS
BW
x
ADV/LD
t
AH
t
AS
ADDRESS
A1
A2
A3
A4
A5
A6
A7
t
DH
t
DS
Data
In-Out (DQ)
t
CLZ
D(A1)
D(A2)
D(A5)
Q(A4)
Q(A3)
D(A2+1)
t
DOH
t
CHZ
t
CO
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE
t
OEV
t
OELZ
t
OEHZ
t
DOH
DON’T CARE
UNDEFINED
Q(A6)
Q(A4+1)
相關(guān)PDF資料
PDF描述
CY7C1370D-250BGI 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1370D-250BZC 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1370D-250BZI 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1372D 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
CY7C1372D-167AXC 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1370D-250BZC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 2.6NS 165FBGA - Bulk
CY7C1370DV25-167 制造商:Cypress Semiconductor 功能描述:
CY7C1370DV25-167AXC 功能描述:靜態(tài)隨機(jī)存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1370DV25-167AXCT 功能描述:靜態(tài)隨機(jī)存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1370DV25-167AXI 功能描述:靜態(tài)隨機(jī)存取存儲器 512Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray