參數(shù)資料
型號(hào): CY7C1354C-166BZXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
中文描述: 256K X 36 ZBT SRAM, 3.5 ns, PBGA165
封裝: (13 X 15 X 1.4) MM, LEAD FREE, PLASTIC, FBGA-165
文件頁(yè)數(shù): 16/28頁(yè)
文件大?。?/td> 467K
代理商: CY7C1354C-166BZXI
CY7C1354C
CY7C1356C
Document #: 38-05538 Rev. *G
Page 16 of 28
Boundary Scan Exit Order (512K × 18)
Bit #
1
2
3
4
5
6
7
8
9
10
119-ball ID
K4
H4
M4
F4
B4
G4
C3
B3
T2
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
D6
E7
F6
G7
H6
T7
K7
L6
N6
P7
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
T6
A3
C5
B5
A5
C6
A6
P4
N4
R6
T5
165-ball ID
B6
B7
A7
B8
A8
A9
B10
A10
A11
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
C11
D11
E11
F11
G11
H11
J10
K10
L10
M10
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
R11
R10
P10
R9
P9
R8
P8
R6
P6
R4
P4
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
T3
R2
R3
R3
P3
R1
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
P2
N1
M2
L1
K2
Not Bonded
(Preset to 1)
H1
G2
E2
D1
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
C2
A2
E4
B2
Not Bonded
(Preset to 0
G3
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
N1
M1
L1
K1
J1
Not Bonded
(Preset to 1)
G2
F2
E2
D2
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
B2
A2
A3
B3
Not Bonded
(Preset to 0)
Not Bonded
(Preset to 0)
A4
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
Not Bonded
(Preset to 0
L5
B6
68
69
B5
A6
Boundary Scan Exit Order (512K × 18)
(continued)
Bit #
119-ball ID
165-ball ID
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相關(guān)PDF資料
PDF描述
CY7C1354C-200AXC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1354C-200AXI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1354C-200BGC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1354C-200BGI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1354C-200BGXC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1354C-167AXC 功能描述:IC SRAM 9MBIT 167MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1354C-200AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354C-200AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354C-200AXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync-PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354C-200AXIKJ 制造商:Cypress Semiconductor 功能描述: