參數(shù)資料
型號: CY7C1352B-80AC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 256K x 18 Pipilined SRAm with NoBL Architecture
中文描述: 256K X 18 ZBT SRAM, 7 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁數(shù): 7/12頁
文件大?。?/td> 189K
代理商: CY7C1352B-80AC
CY7C1352B
PRELIMINARY
7
Capacitance
[10]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
DD
= 3.3V.
V
DDQ
= 3.3V
4
pF
C
CLK
Clock Input Capacitance
4
pF
C
I/O
Input/Output Capacitance
4
pF
AC Test Loads and Waveforms
Thermal Resistance
Description
Test Conditions
Symbol
TQFP Typ.
Units
Notes
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 4.25 x 1.125 inch, 4-
layer printed circuit board
Θ
JA
28
°
C/W
10
Thermal Resistance
(Junction to Case)
Θ
JC
4
°
C/W
10
Note:
10. Tested initially and after any design or process change that may affect these parameters.
11. AC test conditions assume signal transition time of 2 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading shown in (a)
of AC Test Loads and Waveforms.
3.0V
GND
OUTPUT
R=317
R=351
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
ALL INPUT PULSES
1352B-2
OUTPUT
R
L
=50
Z
0
=50
V
L
= 1.5V
3.3V
[11]
相關PDF資料
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CY7C1353F 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
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