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| 型號： | CY7C1352B-143AC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K x 18 Pipilined SRAm with NoBL Architecture |
| 中文描述： | 256K X 18 ZBT SRAM, 4 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 189K |
| 代理商： | CY7C1352B-143AC |
CY7C1352B
PRELIMINARY
6
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
.....................................
65
°
C to +150
°
C
Ambient Temperature with
Power Applied
..................................................
55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND
.........
0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[7]
.....................................
0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[7]
..................................
0.5V to V
DDQ
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Ambient
Temperature
[8]
0
°
C to +70
°
C
V
DD
/V
DDQ
3.3V ± 5%
Com
’
l
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min.
Max.
Unit
V
DD
V
DDQ
V
OH
V
OL
V
IH
V
IL
I
X
Power Supply Voltage
3.135
3.465
V
I/O Supply Voltage
3.135
3.465
V
Output HIGH Voltage
V
DD
= Min., I
OH
=
–
4.0 mA
[9]
V
DD
= Min., I
OL
= 8.0 mA
[9]
2.4
V
Output LOW Voltage
0.4
V
Input HIGH Voltage
Input LOW Voltage
[7]
2.0
0.3
5
30
5
V
DD
+
0.3V
0.8
V
V
μ
A
μ
A
μ
A
mA
Input Load Current
GND
≤
V
I
≤
V
DDQ
5
Input Current of MODE
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
30
I
OZ
I
CC
5
5.0-ns cycle, 166 MHz
400
6.6-ns cycle, 150 MHz
375
mA
7.0-ns cycle, 143 MHz
350
mA
7.5-ns cycle, 133 MHz
300
mA
10-ns cycle, 100 MHz
250
mA
12.5-ns cycle, 80 MHz
200
mA
I
SB1
Automatic CE
Power-Down
Current
—
TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
f = f
MAX
= 1/t
CYC
5.0-ns cycle, 166 MHz
90
mA
6.6-ns cycle, 150 MHz
80
mA
7.0-ns cycle, 143 MHz
70
mA
7.5-ns cycle, 133 MHz
60
mA
10-ns cycle, 100 MHz
50
mA
12.5-ns cycle, 80 MHz
40
mA
I
SB2
Automatic CE Power-
Down Current
—
CMOS
Inputs
Max. V
DD
, Device Deselected, V
IN
≤
0.3V or V
IN
> V
DDQ
–
0.3V,
f = 0
All speed grades
5
mA
I
SB3
Automatic CE Power-
Down Current
—
CMOS
Inputs
Max. V
DD
, Device Deselected, or
V
IN
≤
0.3V or V
IN
> V
DDQ
–
0.3V
f = f
MAX
= 1/t
CYC
5.0-ns cycle, 166 MHz
80
mA
6.6-ns cycle, 150 MHz
70
mA
7.0-ns cycle, 143 MHz
60
mA
7.5-ns cycle, 133 MHz
50
mA
10-ns cycle, 100 MHz
40
mA
12.5-ns cycle, 80 MHz
30
mA
Shaded areas contain advance information.
Notes:
7.
8.
9.
Minimum voltage equals
–
2.0V for pulse duration less than 20 ns.
T
is the case temperature.
The load used for V
OH
and V
CL
testing is shown in part (b) of A/C Test Loads and Waveforms.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1352F-100AC | 功能描述:IC SRAM 4.5MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1352F-133AC | 功能描述:IC SRAM 4.5MBIT 133MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1352F-133ACT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1352F-200AC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1352G-100AXC | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 3.3V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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