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參數(shù)資料
| 型號(hào)： | CY7C1320BV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM) |
| 中文描述： | 18兆位的DDR - II SRAM的2字突發(fā)架構(gòu)（2字突發(fā)結(jié)構(gòu),18 -兆位的DDR - II SRAM的） |
| 文件頁數(shù)： | 28/28頁 |
| 文件大?。?/td> | 469K |
| 代理商： | CY7C1320BV18 |
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CY7C1316BV18
CY7C1916BV18
CY7C1318BV18
CY7C1320BV18
Document Number: 38-05621 Rev. *C
Page 28 of 28
Document History Page
Document Title: CY7C1316BV18/CY7C1916BV18/CY7C1318BV18/CY7C1320BV18 18-Mbit DDR-II SRAM 2-Word
Burst Architecture
Document Number: 38-05621
Orig. of
Change
**
252474
See ECN
SYT
New data sheet
*A
325581
See ECN
SYT
Removed CY7C1916BV18 from the title
Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for I
DD
and I
SB1
specs
Replaced the TBDs on the Thermal Characteristics Table to
Θ
JA
= 28.51
°
C/W
and
Θ
JC
= 5.91
°
C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
(13 x 15 x 1.4 mm)
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per avail-
ability
*B
413997
See ECN
NXR
Converted from Preliminary to Final
Added CY7C1916BV18 part number to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #15, 16, 17 on page# 19
Replaced Three-state with Tri-state
Changed the description of I
X
from Input Load Current to Input Leakage Current
on page# 20
Modified the I
DD
and I
SB
values
Modified test condition in Footnote #18 on page# 20 from V
DDQ
< V
DD
to
V
DDQ
< V
DD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*C
472384
See ECN
NXR
Modified the ZQ Definition from Alternately, this pin can be connected directly to
V
DD
to Alternately, this pin can be connected directly to V
DDQ
Included Maximum Ratings for Supply Voltage on V
DDQ
Relative to GND
Changed the Maximum Ratings for DC Input Voltage from V
DDQ
to V
DD
Changed t
TH
and t
TL
from 40 ns to 20 ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
, t
TDIH
,
t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP AC Switching
Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
REV.
ECN No.
Issue Date
Description of Change
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1316BV18 | 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM) |
| CY7C1318BV18 | 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst結(jié)構(gòu),18-Mbit DDR-II SRAM) |
| CY7C192 | 64K x 4 Static RAM with Separate I/O(帶獨(dú)立的輸入/輸出口的64K x 4靜態(tài) RAM) |
| CY7C194B | 256 Kb (64K x 4) Static RAM |
| CY7C194B-15PC | 256 Kb (64K x 4) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1320BV18-167BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 1.8V COM DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1320BV18-167BZCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 1.8V COM DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1320BV18-167BZI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1320BV18200BZC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA |
| CY7C1320BV18-200BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 1.8V COM DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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