參數資料
型號: CY7C1245V18
廠商: Cypress Semiconductor Corp.
英文描述: 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
中文描述: 36兆位的國防評估報告⑩- II SRAM的4字突發(fā)架構(2.0周期讀寫延遲)
文件頁數: 25/28頁
文件大小: 1042K
代理商: CY7C1245V18
CY7C1241V18
CY7C1256V18
CY7C1243V18
CY7C1245V18
Document Number: 001-06365 Rev. *C
Page 25 of 28
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com
for actual products offered.
Speed
(MHz)
Ordering Code
Diagram
375
CY7C1241V18-375BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1256V18-375BZC
CY7C1243V18-375BZC
CY7C1245V18-375BZC
CY7C1241V18-375BZXC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1256V18-375BZXC
CY7C1243V18-375BZXC
CY7C1245V18-375BZXC
CY7C1241V18-375BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1256V18-375BZI
CY7C1243V18-375BZI
CY7C1245V18-375BZI
CY7C1241V18-375BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1256V18-375BZXI
CY7C1243V18-375BZXI
CY7C1245V18-375BZXI
333
CY7C1241V18-333BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1256V18-333BZC
CY7C1243V18-333BZC
CY7C1245V18-333BZC
CY7C1241V18-333BZXC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1256V18-333BZXC
CY7C1243V18-333BZXC
CY7C1245V18-333BZXC
CY7C1241V18-333BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1256V18-333BZI
CY7C1243V18-333BZI
CY7C1245V18-333BZI
CY7C1241V18-333BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1256V18-333BZXI
CY7C1243V18-333BZXI
CY7C1245V18-333BZXI
Package
Package Type
Operating
Range
Commercial
Industrial
Commercial
Industrial
[+] Feedback
相關PDF資料
PDF描述
CY7C1245V18-300BZC 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1245V18-300BZI 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1245V18-300BZXC 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1245V18-300BZXI 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1256V18 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
相關代理商/技術參數
參數描述
CY7C1245V18-375BZC 制造商:Cypress Semiconductor 功能描述:
CY7C1245XC 制造商:Cypress Semiconductor 功能描述:
CY7C12481KV18-400BZC 功能描述:靜態(tài)隨機存取存儲器 2M X 18 400MHz DDR II+ 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C12481KV18-400BZXC 功能描述:IC SRAM 36MBIT 400MHZ 165-FPBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN(2x3) 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF)
CY7C1248KV18-400BZC 功能描述:靜態(tài)隨機存取存儲器 36MB (2Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray