參數(shù)資料
型號： CY7C1176V18-333BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
中文描述： 2M X 9 QDR SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165
文件頁數(shù)： 26/29頁
文件大?。?/td> 956K
代理商： CY7C1176V18-333BZC
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document Number: 001-06582 Rev. *C
Page 26 of 29
Ordering Information
Not all of the speed, package and temperature ranges are available. Contact your local sales representative or visit
www.cypress.com
for actual products offered.
Speed
(MHz)
400
Ordering Code
Package
Diagram
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Package Type
Operating
Range
Commercial
CY7C1161V18-400BZC
CY7C1176V18-400BZC
CY7C1163V18-400BZC
CY7C1165V18-400BZC
CY7C1161V18-400BZXC
CY7C1176V18-400BZXC
CY7C1163V18-400BZXC
CY7C1165V18-400BZXC
CY7C1161V18-400BZI
CY7C1176V18-400BZI
CY7C1163V18-400BZI
CY7C1165V18-400BZI
CY7C1161V18-400BZXI
CY7C1176V18-400BZXI
CY7C1163V18-400BZXI
CY7C1165V18-400BZXI
CY7C1161V18-375BZC
CY7C1176V18-375BZC
CY7C1163V18-375BZC
CY7C1165V18-375BZC
CY7C1161V18-375BZXC
CY7C1176V18-375BZXC
CY7C1163V18-375BZXC
CY7C1165V18-375BZXC
CY7C1161V18-375BZI
CY7C1176V18-375BZI
CY7C1163V18-375BZI
CY7C1165V18-375BZI
CY7C1161V18-375BZXI
CY7C1176V18-375BZXI
CY7C1163V18-375BZXI
CY7C1165V18-375BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
375
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
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相關(guān)PDF資料
PDF描述
CY7C1176V18-333BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-333BZXC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-333BZXI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1166V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1166V18-300BZC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
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