參數(shù)資料
型號: CY7C1176V18-333BZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
中文描述: 2M X 9 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165
文件頁數(shù): 22/29頁
文件大?。?/td> 956K
代理商: CY7C1176V18-333BZC
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document Number: 001-06582 Rev. *C
Page 22 of 29
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
C
IN
C
CLK
C
O
Description
Test Conditions
Max
5
6
7
Unit
pF
pF
pF
Input Capacitance
Clock Input Capacitance
Output Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
DD
= 1.8V
V
DDQ
= 1.5V
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
165 FBGA
Package
17.2
Unit
Θ
JA
Thermal Resistance
(junction to ambient)
Thermal Resistance
(junction to case)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
°C/W
Θ
JC
4.15
°C/W
AC Test Loads and Waveforms
Figure 5. AC Test Loads and Waveforms
1.25V
0.25V
R = 50
5 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
Device
Under
Test
R
L
= 50
Z
0
= 50
V
REF
= 0.75V
V
REF
= 0.75V
[22]
0.75V
0.75V
Device
Under
Test
OUTPUT
0.75V
V
REF
V
REF
OUTPUT
ZQ
ZQ
(a)
Slew Rate = 2 V/ns
RQ =
250
(b)
RQ =
250
Notes
22.Unless otherwise noted, test conditions are based upon signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250
, V
DDQ
= 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified I
OL
/I
OH
and load capacitance shown in (a) of AC Test Loads.
[+] Feedback
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