- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378497 > CY7C1165V18 (Cypress Semiconductor Corp.) 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) PDF資料下載
參數(shù)資料
| 型號： | CY7C1165V18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| 中文描述： | 18兆位的國防評估報告⑩- II SRAM的4字突發(fā)架構(gòu)（2.5周期讀寫延遲） |
| 文件頁數(shù)： | 7/29頁 |
| 文件大小： | 956K |
| 代理商： | CY7C1165V18 |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document Number: 001-06582 Rev. *C
Page 7 of 29
CQ
Echo Clock
Synchronous Echo Clock Outputs
. This is a free running clock and is synchronized to the input
clock (K) of the QDR-II+. The timings for the echo clocks are shown in
“Switching Characteristics”
on page 23.
ZQ
Input
Output Impedance Matching Input
. Used to tune the device outputs to the system data bus
impedance. CQ, CQ and Q
[x:0]
output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin is connected directly to V
DDQ
, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left uncon-
nected.
DOFF
Input
DLL Turn Off
Active LOW
. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned-off operation are different from those listed in this data sheet. For normal
operation, this pin is connected to a pull up through a 10 K
or less pull up resistor. The device
behaves in QDR-I mode when the DLL is turned off. In this mode, the device operates at a frequency
of up to 167 MHz with QDR-I timing.
TDO
Output
TDO for JTAG
.
TCK
Input
TCK pin for JTAG
.
TDI
Input
TDI pin for JTAG
.
TMS
Input
TMS pin for JTAG
.
NC
N/A
Not connected to the die
. Can be tied to any voltage level.
NC/36M
N/A
Not connected to the die
. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die
. Can be tied to any voltage level.
NC
/144M
N/A
Not connected to the die
. Can be tied to any voltage level.
NC
/288M
N/A
Not connected to the die
. Can be tied to any voltage level.
V
REF
Input-
Reference
Reference Voltage Input
. Static input used to set the reference level for HSTL inputs, outputs, and
AC measurement points.
V
DD
Power Supply
Power supply inputs to the core of the device
.
V
SS
Ground
Ground for the device
.
V
DDQ
Power Supply
Power supply inputs for the outputs of the device
.
Pin Definitions
(continued)
Pin Name
IO
Pin Description
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1165V18-300BZC | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1165V18-300BZI | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1165V18-300BZXC | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1165V18-300BZXI | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1165V18-333BZC | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1165V18-300BZXC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1165V18-400BZXC | 功能描述:靜態(tài)隨機存取存儲器 18M Q+, B4 2.5 LATENCY RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1165XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C11681KV18-400BZC | 功能描述:靜態(tài)隨機存取存儲器 1Mb x 18 400 MHz Sync 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C11681KV18-400BZXC | 功能描述:靜態(tài)隨機存取存儲器 1Mb x 18 400 MHz Sync 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。