參數(shù)資料
型號(hào): CY7C1145V18
廠商: Cypress Semiconductor Corp.
英文描述: 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
中文描述: 18兆位的國(guó)防評(píng)估報(bào)告⑩- II SRAM的4字突發(fā)架構(gòu)(2.0周期讀寫(xiě)延遲)
文件頁(yè)數(shù): 25/28頁(yè)
文件大?。?/td> 954K
代理商: CY7C1145V18
CY7C1141V18
CY7C1156V18
CY7C1143V18
CY7C1145V18
Document Number: 001-06583 Rev. *C
Page 25 of 28
Ordering Information
Not all of the speed, package and temperature ranges are available. Contact your local sales representative or visit
www.cypress.com
for actual products offered.
Speed
(MHz)
375
Ordering Code
Package
Diagram
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Package Type
Operating
Range
Commercial
CY7C1141V18-375BZC
CY7C1156V18-375BZC
CY7C1143V18-375BZC
CY7C1145V18-375BZC
CY7C1141V18-375BZXC
CY7C1156V18-375BZXC
CY7C1143V18-375BZXC
CY7C1145V18-375BZXC
CY7C1141V18-375BZI
CY7C1156V18-375BZI
CY7C1143V18-375BZI
CY7C1145V18-375BZI
CY7C1141V18-375BZXI
CY7C1156V18-375BZXI
CY7C1143V18-375BZXI
CY7C1145V18-375BZXI
CY7C1141V18-333BZC
CY7C1156V18-333BZC
CY7C1143V18-333BZC
CY7C1145V18-333BZC
CY7C1141V18-333BZXC
CY7C1156V18-333BZXC
CY7C1143V18-333BZXC
CY7C1145V18-333BZXC
CY7C1141V18-333BZI
CY7C1156V18-333BZI
CY7C1143V18-333BZI
CY7C1145V18-333BZI
CY7C1141V18-333BZXI
CY7C1156V18-333BZXI
CY7C1143V18-333BZXI
CY7C1145V18-333BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
333
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
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相關(guān)PDF資料
PDF描述
CY7C1145V18-300BZC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1145V18-300BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1145V18-300BZXC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1145V18-300BZXI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1156V18 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1146KV18-400BZC 制造商:Cypress Semiconductor 功能描述:
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CY7C1148KV18-400BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 440MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1148KV18-400BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray