參數資料
型號: CY7C1143V18
廠商: Cypress Semiconductor Corp.
英文描述: 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
中文描述: 18兆位的國防評估報告⑩- II SRAM的4字突發(fā)架構(2.0周期讀寫延遲)
文件頁數: 21/28頁
文件大?。?/td> 954K
代理商: CY7C1143V18
CY7C1141V18
CY7C1156V18
CY7C1143V18
CY7C1145V18
Document Number: 001-06583 Rev. *C
Page 21 of 28
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied. –55°C to + 125°C
Supply Voltage on V
DD
Relative to GND.......–0.5V to + 2.9V
Supply Voltage on V
DDQ
Relative to GND..... –0.5V to + V
DD
DC Applied to Outputs in High-Z ........–0.5V to V
DDQ
+ 0.3V
DC Input Voltage
[13]
.............................–0.5V to V
DDQ
+ 0.3V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch up Current.................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (T
A
)
0°C to +70°C
–40°C to +85°C
V
DD
[17]
1.8 ± 0.1V
V
DDQ
[17]
1.4V to
V
DD
Commercial
Industrial
Electrical Characteristics
The DC Electrical Characteristics over the operating range follows.
[14]
Parameter
V
DD
V
DDQ
V
OH
V
OL
V
OH(LOW)
V
OL(LOW)
V
IH
V
IL
I
X
I
OZ
V
REF
I
DD
Description
Test Conditions
Min
1.7
1.4
Typ
1.8
1.5
Max
1.9
V
DD
Unit
V
V
V
V
V
V
V
V
μ
A
μ
A
V
mA
mA
mA
mA
mA
mA
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
[20]
V
DD
Operating Supply
Note 18
Note 19
I
OH
=
0.1 mA, Nominal Impedance
I
OL
= 0.1 mA, Nominal Impedance
V
DDQ
/2 – 0.12
V
DDQ
/2 – 0.12
V
DDQ
– 0.2
V
SS
V
REF
+ 0.1
–0.15
2
2
0.68
V
DDQ
/2 + 0.12
V
DDQ
/2 + 0.12
V
DDQ
0.2
V
DDQ
+ 0.15
V
REF
– 0.1
2
2
0.95
663
708
766
201
212
227
GND
V
I
V
DDQ
GND
V
I
V
DDQ,
Output Disabled
Typical Value = 0.75V
V
DD
= Max, I
OUT
= 0 mA,
f = f
max
= 1/t
CYC
0.75
300 MHz
333 MHz
375 MHz
300 MHz
333 MHz
375 MHz
I
SB1
Automatic Power Down
Current
Max V
DD
,
Both Ports Deselected,
V
IN
V
IH
or V
IN
V
IL
f = f
max
=1/t
CYC
,
Inputs Static
AC Electrical Characteristics
The AC Electrical Characteristics over the operating range follows.
[13]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
V
IH
Input HIGH Voltage
V
REF
+ 0.2
V
DDQ
+ 0.24
V
V
IL
Input LOW Voltage
–0.24
V
REF
– 0.2
V
Notes
17.Power up: Is based on a linear ramp from 0V to V
(min) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
18.Output are impedance controlled. I
OH
=
(V
DDQ
/2)/(RQ/5) for values of 175
<= RQ <= 350
.
19.Output are impedance controlled. I
= (V
/2)/(RQ/5) for values of 175
<= RQ <= 350
.
20.V
REF
(min) = 0.68V or 0.46V
DDQ
, whichever is larger, V
REF
(max) = 0.95V or 0.54 V
DDQ
, whichever is smaller.
[+] Feedback
相關PDF資料
PDF描述
CY7C1143V18-300BZC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
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