- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄379057 > CY7C1141V18 (Cypress Semiconductor Corp.) 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1141V18 |
| 廠(chǎng)商： | Cypress Semiconductor Corp. |
| 英文描述： | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| 中文描述： | 18兆位的國(guó)防評(píng)估報(bào)告⑩- II SRAM的4字突發(fā)架構(gòu)（2.0周期讀寫(xiě)延遲） |
| 文件頁(yè)數(shù)： | 7/28頁(yè) |
| 文件大?。?/td> | 954K |
| 代理商： | CY7C1141V18 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)
CY7C1141V18
CY7C1156V18
CY7C1143V18
CY7C1145V18
Document Number: 001-06583 Rev. *C
Page 7 of 28
CQ
Echo Clock
Synchronous Echo Clock Outputs
. This is a free running clock and is synchronized to the input
clock (K) of the QDR-II+. The timings for the echo clocks are shown in the
“Switching Characteristics”
on page 23.
ZQ
Input
Output Impedance Matching Input
. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ and Q
[x:0]
output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, connect this pin directly to V
DDQ
, which enables
the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off
Active LOW
. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned off operationis different from those listed in this data sheet. For normal
operation, connect this pin to a pull up through a 10 K
or less pull up resistor. The device behaves
in QDR-I mode when the DLL is turned off. In this mode, operate the device at a frequency of up to
167 MHz with QDR-I timing.
TDO
Output
TDO for JTAG
.
TCK
Input
TCK pin for JTAG
.
TDI
Input
TDI pin for JTAG
.
TMS
Input
TMS pin for JTAG
.
NC
N/A
Not connected to the die
. Tie to any voltage level.
NC/36M
N/A
Not connected to the die
. Tie to any voltage level.
NC/72M
N/A
Not connected to the die
. Tie to any voltage level.
NC
/144M
N/A
Not connected to the die
. Tie to any voltage level.
NC
/288M
N/A
Not connected to the die
. Tie to any voltage level.
V
REF
Input-
Reference
Reference Voltage Input
. Static input used to set the reference level for HSTL inputs, outputs, and
AC measurement points.
V
DD
Power Supply
Power supply inputs to the core of the device
.
V
SS
Ground
Ground for the device
.
V
DDQ
Power Supply
Power supply inputs for the outputs of the device
.
Pin Definitions
(continued)
Pin Name
IO
Pin Description
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1141V18-300BZC | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1141V18-300BZI | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1141V18-300BZXC | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1141V18-300BZXI | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1143V18 | 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1143KV18-400BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1143KV18-400BZI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1143KV18-450BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 450MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1145KV18-400BZXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (512Kx36) 1.8v 400MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1145KV18-400BZXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18Mb 1.8V 512Kb x 36 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。