參數(shù)資料
型號(hào)： CY7C1031-8JC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 64K x 18 Synchronous Cache RAM
中文描述： 64K X 18 CACHE SRAM, 8.5 ns, PQCC52
封裝： PLASTIC, LCC-52
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 282K
代理商： CY7C1031-8JC
CY7C1031
CY7C1032
Document #: 38-05278 Rev. *A
Page 5 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ...................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied...............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
Relative to GND............–0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State
[2]
...............................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
...........................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Com’l
Ambient
Temperature
[3]
0
°
C to +70
°
C
V
CC
V
CCQ
5V
±
5%
3.0V to V
CC
Electrical Characteristics
Over the Operating Range
[4]
Parameter
V
OH
V
OL
V
IH
V
IL
I
X
I
OZ
Description
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
7C1031-8
7C1032-8
Min.
2.4
7C1031-10
7C1032-10
Min.
2.4
7C1031-12
Unit
V
V
V
V
μ
A
μ
A
Max.
V
CCQ
0.4
V
CC
+
0.3V
0.8
1
5
Max.
V
CCQ
0.4
V
CC
+
0.3V
0.8
1
5
Min.
2.4
Max.
V
CCQ
0.4
V
CC
+
0.3V
0.8
1
5
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[2]
Input Load Current
Output Leakage Current
2.2
–0.3
–1
–5
2.2
–0.3
–1
–5
2.2
–0.3
–1
–5
GND
≤
V
I
≤
V
CC
GND
≤
V
I
≤
V
CC
, Output
Disabled
V
CC
= Max., V
OUT
= GND
I
OS
Output Short Circuit
Current
[5]
V
CC
Operating Supply
Current
–300
–300
–300
mA
I
CC
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
Max. V
CC
, CS
≥
V
IH
, V
IN
V
IH
or
V
IN
≤
V
IL
, f = f
MAX
Max. V
CC
, CS
≥
V
CC
– 0.3V, V
IN
≥
V
CC
– 0.3V or V
IN
≤
0.3V, f = 0
[6]
Com’l
280
280
230
mA
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down Current —
CMOS Inputs
Com’l
80
80
60
mA
I
SB2
Com’l
30
30
30
mA
Capacitance
[7]
Parameter
Description
Test Conditions
Max.
4.5
5
8
Unit
pF
pF
pF
C
IN
: Addresses
C
IN
: Other Inputs
C
OUT
Notes:
2. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
3. T
is the case temperature.
4. See the last page for Group A subgroup testing information.
5. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
6. Inputs are disabled, clock is allowed to run at speed.
7. Tested initially and after any design or process changes that may affect these parameters.
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Com’l
Com’l
Com’l
Output Capacitance
相關(guān)PDF資料
PDF描述
CY7C1031-10JC 64K x 18 Synchronous Cache RAM
CY7C1031-12JC 64K x 18 Synchronous Cache RAM
CY7C1032-10JC 64K x 18 Synchronous Cache RAM
CY7C1032-8JC 64K x 18 Synchronous Cache RAM
CY7C1059DV33-10BAXI 8-Mbit (1M x 8) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1031-8JCT 制造商:Cypress Semiconductor 功能描述:
CY7C1032-10JC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 5V 1.125M-Bit 64K x 18 10ns 52-Pin PLCC 制造商:Rochester Electronics LLC 功能描述:1MB (64KX18) SYNCH RAM POWER PC BURST - Bulk
CY7C1032-10JCT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 5V 1.125M-Bit 64K x 18 10ns 52-Pin PLCC T/R
CY7C1032-12JC 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C10328JC 制造商:CYPRESS 功能描述:NEW
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*