參數(shù)資料
型號: CY7C1024DV33
廠商: Cypress Semiconductor Corp.
英文描述: 3-Mbit (128K X 24) Static RAM
中文描述: 3兆(128K的x 24)中靜態(tài)RAM
文件頁數(shù): 3/8頁
文件大?。?/td> 295K
代理商: CY7C1024DV33
PRELIMINARY
CY7C1024DV33
Document #: 001-08353 Rev. *A
Page 3 of 8
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
Relative to GND
[2]
....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[2]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
.................................–0.5V to V
CC
+ 0.5V
DC Electrical Characteristics
Over the Operating Range
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
V
CC
Commercial
3.3V
±
0.3V
Parameter
V
OH
V
OL
V
IH
V
IL[2]
I
IX
I
OZ
I
CC
Description
Test Conditions
[7]
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
–8
Unit
V
V
V
V
μ
A
μ
A
mA
Min.
2.4
Max.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply Current
0.4
2.0
–0.3
–1
–1
V
CC
+ 0.3
0.8
+1
+1
185
GND < V
I
< V
CC
GND < V
OUT
< V
CC
, Output Disabled
V
CC
= Max., f = f
MAX
= 1/t
RC
I
OUT
= 0 mA CMOS levels
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
Max. V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V, or V
IN
< 0.3V, f = 0
I
SB1
Automatic CE Power-down
Current —TTL Inputs
Automatic CE Power-down
Current —CMOS Inputs
30
mA
I
SB2
25
mA
Capacitance
[3]
Parameter
Description
Test Conditions
Max.
8
10
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
I/O Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= 3.3V
Thermal Resistance
[3]
Parameter
Θ
JA
Θ
JC
Description
Test Conditions
PBGA
TBD
TBD
Unit
°
C/W
°
C/W
Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch,
Thermal Resistance (Junction to Case)
four-layer printed circuit board
AC Test Loads and Waveforms
[4]
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
3.3V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(b)
R1 317
R2
351
Rise time > 1 V/ns
Fall time: > 1 V/ns
(c)
50
Notes:
2. V
(min.) = –2.0V and V
(max) = V
+ 2V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
4. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
DD
(3.0V). 100
μ
s (t
power
) after reaching the minimum
operating V
DD
, normal SRAM operation can begin including reduction in V
DD
to the data retention (V
CCDR
, 2.0V) voltage.
(a)
OUTPUT
Z
0
= 50
V
TH
= 1.5V
30 pF** Capacitive Load consists of all
components of the test environment.
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1024DV33-8BGXC 3-Mbit (128K X 24) Static RAM
CY7C1031-8JC 64K x 18 Synchronous Cache RAM
CY7C1031-10JC 64K x 18 Synchronous Cache RAM
CY7C1031-12JC 64K x 18 Synchronous Cache RAM
CY7C1032-10JC 64K x 18 Synchronous Cache RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1024DV33-10BGXI 功能描述:靜態(tài)隨機存取存儲器 3-Mbit (128K x 24) 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1024DV33-10BGXIT 功能描述:靜態(tài)隨機存取存儲器 3-Mbit (128K x 24) 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C102D10ZC 制造商:CYPRESS 功能描述:New
CY7C1031-10JC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 5V 1.125M-Bit 64K x 18 10ns 52-Pin PLCC 制造商:Rochester Electronics LLC 功能描述:1MB (64KX18) SYNCH RAM PENTIUM BURST - Bulk
CY7C1031-12JCT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 5V 1.125M-Bit 64K x 18 12ns 52-Pin PLCC T/R