參數(shù)資料
型號(hào)： CY7C1021CV33-8BAXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 1-Mbit (64K x 16) Static RAM
中文描述： 64K X 16 STANDARD SRAM, 8 ns, PBGA48
封裝： 7 X 7 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-48
文件頁(yè)數(shù)： 1/13頁(yè)
文件大小： 379K
代理商： CY7C1021CV33-8BAXC
1-Mbit (64K x 16) Static RAM
CY7C1021CV33
Cypress Semiconductor Corporation
Document #: 38-05132 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 6, 2006
Features
Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
Pin- and function-compatible with CY7C1021BV33
High speed
— t
AA
= 8 ns (Commercial & Industrial)
— t
AA
= 12 ns (Automotive)
CMOS for optimum speed/power
Low active power: 345 mW (max.)
Automatic power-down when deselected
Independent control of upper and lower bits
Available in Pb-free and non Pb-free 44-pin
400-Mil SOJ
44-pin TSOP II and 48-ball FBGA packages
Functional Description
[1]
The CY7C1021CV33 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the end of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
The CY7C1021CV33 is available in 44-pin 400-Mil wide SOJ,
44-pin TSOP II and 48-ball FBGA packages.
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
64K x 16
RAM Array
I/O
1
–I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
BLE
I/O
9
–I/O
16
CE
WE
BHE
A
8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1021CV33-8VC 制造商:Rochester Electronics LLC 功能描述:1MB (64K X 16)- FAST ASYNCH SRAM - Bulk
CY7C1021CV33-8VXC 功能描述:IC SRAM 1MBIT 8NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1021CV33-8VXCT 功能描述:IC SRAM 1MBIT 8NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1021CV33-8ZI 制造商:Cypress Semiconductor 功能描述:1MB (64K X 16)- FAST ASYNCH SRAM - Bulk
CY7C1021CV33-8ZXC 功能描述:IC SRAM 1MBIT 8NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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