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參數(shù)資料
| 型號： | CY7C1021CV33-10ZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-Mbit (64K x 16) Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | LEAD FREE, TSOP2-44 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 379K |
| 代理商： | CY7C1021CV33-10ZXC |
CY7C1021CV33
Document #: 38-05132 Rev. *G
Page 6 of 13
Switching Characteristics
Over the Operating Range
[7]
Parameter
Read Cycle
t
power[8]
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU[11]
t
PD[11]
t
DBE
t
LZBE
t
HZBE
Write Cycle
[12]
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
t
BW
Description
-8
-10
-12
-15
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
V
CC
(typical) to the first access
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
[9]
OE HIGH to High-Z
[9, 10]
CE LOW to Low-Z
[9]
CE HIGH to High-Z
[9, 10]
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low-Z
Byte Disable to High-Z
100
8
100
10
100
12
100
15
μ
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
10
12
15
3
3
3
3
8
5
10
5
12
6
15
7
0
0
0
0
4
5
6
7
3
3
3
3
4
5
6
7
0
0
0
0
8
5
10
5
12
6
15
7
0
0
0
0
4
5
6
7
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE HIGH to Low-Z
[9]
WE LOW to High-Z
[9, 10]
Byte Enable to End of Write
8
7
7
0
0
6
5
0
3
10
8
8
0
0
7
5
0
3
12
9
9
0
0
8
6
0
3
15
10
10
0
0
10
8
0
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
5
6
7
6
7
8
9
Notes:
7. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
8. t
gives the minimum amount of time that the power supply should be at typical V
values until the first memory access is performed.
9. At any given temperature and voltage condition, t
is less than t
, t
is less than t
, and t
is less than t
for any given device.
10.t
, t
HZBE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured
±
500 mV from steady-state
voltage.
11. This parameter is guaranteed by design and is not tested.
12.The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a
Write, and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal
that terminates the Write.
[+] Feedback
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| CY7C1021CV33-12BAXI | 1-Mbit (64K x 16) Static RAM |
| CY7C1021CV33-12VE | 1-Mbit (64K x 16) Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1021CV33-10ZXCT | 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021CV33-10ZXI | 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021CV33-10ZXIT | 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021CV331-0ZXIT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II T/R |
| CY7C1021CV33-12BAI | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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