參數(shù)資料
型號： CY7C1018CV33-12VC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 128K x 8 Static RAM
中文描述： 128K X 8 STANDARD SRAM, 12 ns, PDSO32
封裝： 0.300 INCH, SOJ-32
文件頁數(shù)： 2/7頁
文件大?。?/td> 132K
代理商： CY7C1018CV33-12VC
CY7C1018CV33
Document #: 38-05131 Rev. *C
Page 2 of 7
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
–
55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[2]
...
–
0.5V to + 4.6V
DC Voltage Applied to Outputs
[7]
in High-Z State .......................................
–
0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
................................
–
0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Ambient Temperature
0
°
C to +70
°
C
V
CC
Commercial
3.3V
±
10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Output HIGH Voltage
Test Conditions
V
CC
= Min.,
I
OH
=
–
4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
7C1018CV33
-8
Min.
2.4
7C1018CV33
-10
Min.
2.4
7C1018CV33
-12
Min.
2.4
7C1018CV33
-15
Min.
2.4
Unit
V
Max.
Max.
Max.
Max.
V
OL
Output LOW Voltage
0.4
0.4
0.4
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
V
V
IL
I
IX
I
OZ
Input LOW Voltage
[2]
Input Load Current
Output Leakage
Current
Output Short
Circuit Current
V
CC
Operating
Supply Current
–
0.3
–
1
–
1
–
0.3
–
1
–
1
–
0.3
–
1
–
1
–
0.3
–
1
–
1
V
μ
A
μ
A
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
–
0.3V,
V
IN
> V
CC
–
0.3V,
or V
IN
< 0.3V, f = 0
I
OS[3]
–
300
-300
–
300
-300
mA
I
CC
95
90
85
80
mA
I
SB1
Automatic CE
Power-down Current
—
TTL Inputs
Automatic CE
Power-down Current
—
CMOS Inputs
15
15
15
15
mA
I
SB2
5
5
5
5
mA
Capacitance
[4]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
8
pF
C
OUT
Output Capacitance
8
pF
Notes:
2.
3.
4.
V
(min.) =
–
2.0V for pulse durations of less than 20 ns.
Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料
PDF描述
CY7C1018CV33-15VC 128K x 8 Static RAM
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CY7C1020CV33-10ZC 32K x 16 Static RAM
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CY7C1020-15VC 32K x 16 Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1018CV33-12VCT 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1018CV33-12VI 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C1018CV33-12VIT 制造商:Rochester Electronics LLC 功能描述:1MB (128KX8) 3.3V 300MIL SOJ FAST ASYNCH SRAM - Tape and Reel
CY7C1018CV33-12VXI 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1018CV33-12VXIT 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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