- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379057 > CY7C1006 (Cypress Semiconductor Corp.) 256K x 4 Static RAM(256K x4 靜態(tài) RAM) PDF資料下載
參數(shù)資料
| 型號： | CY7C1006 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K x 4 Static RAM(256K x4 靜態(tài) RAM) |
| 中文描述： | 256K × 4靜態(tài)存儲器（256K x4靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 203K |
| 代理商： | CY7C1006 |
CY7C106
CY7C1006
5
Data Retention Characteristics
Over the Operating Range (L Version Only)
Parameter
V
DR
I
CCDR
t
CDR[4]
t
R[4]
Description
Conditions
[10]
Min.
2.0
Max.
Unit
V
μ
A
ns
V
CC
for Data Retention
Data Retention Current
V
CC
= V
DR
= 2.0V,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or
V
IN
< 0.3V
50
Chip Deselect to Data Retention Time
0
Operation Recovery Time
t
RC
ns
Data Retention Waveform
4.5V
4.5V
CE
V
CC
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
C106–5
Switching Waveforms
Read Cycle No.1
[11, 12]
Read Cycle No. 2 (OE Controlled)
[12, 13]
Notes:
10. No input may exceed V
+0.5V.
11. Device is continuously selected, OE and CE = V
IL
.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
1
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
C106–6
C106–7
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
t
HZOE
t
HZCE
t
PD
HIGH
ADDRESS
CE
DATA OUT
V
CC
SUPPLY
CURRENT
OE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1146V18 | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1150V18-333BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1150V18-333BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1150V18-375BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1150V18-375BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1006B-15VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 256K x 4-Bit 15ns 28-Pin SOJ 制造商:Rochester Electronics LLC 功能描述:1MB (256K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C1006B-15VCT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 256K x 4-Bit 15ns 28-Pin SOJ T/R 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 5V 1MBIT 256K X 4 15NS 28PIN MLD SOJ - Tape and Reel 制造商:Rochester Electronics LLC 功能描述:1MB (256K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C1006B-15VXC | 功能描述:IC SRAM 1MBIT 15NS 28SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1006B-15VXCT | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 5V 1MBIT 256K X 4 15NS 28PIN MLD SOJ - Tape and Reel |
| CY7C1006B-20VC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。