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參數(shù)資料
| 型號： | CY7C09199V |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 3.3V 128K x 9 Synchronous Dual-Port Static RAM(3.3V 128K x 9 同步雙端口靜態(tài)RAM) |
| 中文描述： | 3.3 128K的× 9同步雙端口靜態(tài)RAM（3.3 128K的× 9同步雙端口靜態(tài)RAM）的 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 580K |
| 代理商： | CY7C09199V |
CY7C09079V/89V/99V
CY7C09179V/89V/99V
Document #: 38-06043 Rev. *B
Page 9 of 18
Bank Select Pipelined Read
[20, 21]
-
Left Port Write to Flow-Through Right Port Read
[22, 23, 24, 25]
Notes:
20.In this depth expansion example, B1 represents Bank #1 and B2 is Bank #2; Each Bank consists of one Cypress dual-port device from this datasheet. ADDRESS
(B1)
= ADDRESS
.
21.OE and ADS = V
; CE
, CE
, R/W, CNTEN, and CNTRST = V
.
22.The same waveforms apply for a right port write to flow-through left port read.
23.CE
and ADS = V
; CE
, CNTEN, and CNTRST = V
.
24.OE = V
IL
for the right port, which is being read from. OE = V
for the left port, which is being written to.
25.It t
≤
maximum specified, then data from right port READ is not valid until the maximum specified for t
CWDD
. If t
CCS
>maximum specified, then data is not valid
until t
CCS
+ t
CD1
. t
CWDD
does not apply in this case.
Switching Waveforms
(continued)
D
3
D
1
D
0
D
2
A
0
A
1
A
2
A
3
A
4
A
5
D
4
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
t
SC
t
HC
t
SA
t
HA
t
SC
t
HC
t
SC
t
HC
t
SC
t
HC
t
CKHZ
t
DC
t
DC
t
CD2
t
CKLZ
t
CD2
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
CH2
t
CL2
t
CYC2
CLK
L
ADDRESS
(B1)
CE
0(B1)
DATA
OUT(B2)
DATA
OUT(B1)
ADDRESS
(B2)
CE
0(B2)
t
SA
t
HA
t
SW
t
HW
t
SD
t
HD
MATCH
VALID
t
CCS
t
SW
t
SA
t
HW
t
HA
t
DC
t
CWDD
t
CD1
MATCH
MATCH
NO
MATCH
NO
VALID
VALID
t
DC
t
CD1
CLK
L
R/W
L
ADDRESS
L
DATA
INL
ADDRESS
R
DATA
OUTR
CLK
R
R/W
R
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| CY7C09179 | 32K x 9 Synchronous Dual-Port Static RAM(32K x 9 同步雙端口靜態(tài)RAM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C09199V-12AC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C09199V-12AXC | 功能描述:IC SRAM 1.152MBIT 12NS 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C09199V-6AC | 制造商:Rochester Electronics LLC 功能描述:3.3V 128K X 9 SYNC DPSRAM - Bulk |
| CY7C09199V-6AXC | 功能描述:IC SRAM 1.152MBIT 6.5NS 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C09199V-7AC | 制造商:Rochester Electronics LLC 功能描述:3.3V 128K X 9 SYNC DPSRAM - Bulk |
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