參數(shù)資料
型號: CY7C0832V-167AXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 256K X 18 DUAL-PORT SRAM, 4 ns, PQFP120
封裝: 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-120
文件頁數(shù): 26/32頁
文件大?。?/td> 895K
代理商: CY7C0832V-167AXC
CY7C0851V/CY7C0852V
CY7C0831V/CY7C0832V
Document #: 38-06059 Rev. *I
Page 32 of 32
Document History Page
Document Title: CY7C0851V/CY7C0852V/CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchro-
nous Dual-Port RAM
Document Number: 38-06059
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
111473
11/27/01
DSG
Change from Spec number: 38-01056 to 38-06059
*A
111942
12/21/01
JFU
Updated capacitance values
Updated switching parameters and ISB3
Updated “Read-to-Write-to-Read (OE Controlled)” waveform
Revised static discharge voltage
Revised footnote regarding ISB3
*B
113741
04/02/02
KRE
Updated Isb values
Updated ESD voltage
Corrected 0853 pins L3 and L12
*C
114704
04/24/02
KRE
Added discussion of Pause/Restart for JTAG boundary scan
*D
115336
07/01/02
KRE
Revised speed offerings for all densities
*E
122307
12/27/02
RBI
Power up requirements added to Maximum Ratings Information
*F
123636
1/27/03
KRE
Revise tcd2, tOE, tOHZ, tCKHZ, tCKLZ for the CY7C0853V to 4.7 ns
*G
126053
08/11/03
SPN
Separated out 4M and 9M data sheets
Updated Isb and ICC values
*H
129443
11/03/03
RAZ
Updated Isb and ICC values
*I
231993
See ECN
YDT
Removed “A particular port can write to a certain location while another port
is reading that location.” from Functional Description.
相關(guān)PDF資料
PDF描述
CY7C0851AV-133AXC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-133BBC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-167AXC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-167BBC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0852AV-133BBC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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