參數(shù)資料
型號(hào)： CY62167DV30
廠商： Cypress Semiconductor Corp.
英文描述： 16-Mbit (1M x 16) Static RAM(16-Mb(1M x 16)靜態(tài)RAM)
中文描述： 16兆位（1米× 16），靜態(tài)存儲(chǔ)器（16字節(jié)（1米× 16），靜態(tài)內(nèi)存）
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 322K
代理商： CY62167DV30
CY62167DV30 MoBL
Document #: 38-05328 Rev. *G
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential ...... –0.2V to V
CC
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[7, 8]
................................ –0.2V to V
CC
+ 0.3V
DC Input Voltage
[7, 8]
............................. –0.2V to V
CC
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Device
Range
Ambient
Temperature
–40°C to +85°C
V
CC
[9]
2.20V to
3.60V
CY62167DV30LL Industrial
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
CY62167DV30-45 CY62167DV30-55 CY62167DV30-70
Unit
Min. Typ.
[2]
Max. Min. Typ.
[2]
Max. Min. Typ.
[2]
Max.
V
OH
Output HIGH
Voltage
I
OH
= –0.1 mA
V
CC
= 2.20V
2.0
2.0
2.0
V
I
OH
= –1.0 mA
V
CC
= 2.70V
2.4
2.4
2.4
V
OL
Output LOW
Voltage
I
OL
= 0.1 mA
V
CC
= 2.20V
0.4
0.4
0.4
V
I
OL
= 2.1mA
V
CC
= 2.70V
V
IH
Input HIGH
Voltage
V
CC
= 2.2V to 2.7V
1.8
V
CC
+0.3V
1.8
V
CC
+0.3V
1.8
V
CC
+0.3V
V
V
CC
= 2.7V to 3.6V
2.2
2.2
2.2
V
IL
Input LOW
Voltage
V
CC
= 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
–0.3
0.6
V
V
CC
= 2.7V to 3.6V
0.8
0.8
0.8
I
IX
Input Leakage
Current
GND < V
I
< V
CC
–1
+1
–1
+1
–1
+1
μ
A
I
OZ
Output
Leakage
Current
GND < V
O
< V
CC
, Output Disabled
–1
+1
–1
+1
–1
+1
μ
A
I
CC
V
CC
Operating
Supply
Current
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
f = f
Max
= 1/t
RC
18.5
37
15
30
12
25
mA
f = 1 MHz
2
4
2
4
2
4
I
SB1
Automatic CE
Power-down
Current —
CMOS Inputs
CE
1
> V
CC
0.2V or
CE
2
< 0.2V
V
IN
> V
CC
– 0.2V,
V
IN
< 0.2V,
f = f
Max
(Address and Data Only),
f = 0 (OE, WE, BHE, BLE),
V
CC
= 3.60V
2.5
22
2.5
22
2.5
22
μ
A
I
SB2
Automatic CE
Power-down
Current —
CMOS Inputs
CE
1
> V
CC
– 0.2V or
CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
2.5
22
2.5
22
2.5
22
μ
A
Notes:
7. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
8. V
= V
+ 0.75V for pulse durations less than 20 ns.
9. Full Device AC operation requires linear V
CC
ramp from 0 to V
CC(min.)
and V
CC
must be stable at V
CC(min)
for 500
μ
s.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62167DV30L-70BVI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 16M-Bit 1M x 16 70ns 48-Pin VFBGA
CY62167DV30LL-45ZI 制造商:Cypress Semiconductor 功能描述:
CY62167DV30LL-45ZXI 功能描述:IC SRAM 16MBIT 45NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY62167DV30LL-45ZXIT 功能描述:IC SRAM 16MBIT 45NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY62167DV30LL-55BVI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 1.8V SUPER LO PWR 1MEGX16 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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