參數(shù)資料
型號: CY62148E
廠商: Cypress Semiconductor Corp.
英文描述: 4-Mbit (512K x 8) Static RAM
中文描述: 4兆位(為512k × 8)靜態(tài)RAM
文件頁數(shù): 4/10頁
文件大?。?/td> 860K
代理商: CY62148E
CY62148E MoBL
Document #: 38-05442 Rev. *F
Page 4 of 10
Thermal Resistance
[10]
Parameter
Description
Test Conditions
SOIC
Package
75
TSOP II
Package
77
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
°
C/W
Θ
JC
10
13
°
C/W
AC Test Loads and Waveforms
Parameters
R1
R2
R
TH
V
TH
5.0V
1800
990
639
1.77
Unit
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions
Min
Typ
[3]
Max
Unit
V
DR
V
CC
for Data Retention
2
V
I
CCDR
Data Retention Current
V
CC
= V
DR
, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
Ind’l/Auto-A
1
7
μ
A
t
CDR [10]
t
R [11]
Chip Deselect to Data Retention Time
0
ns
Operation Recovery Time
t
RC
ns
Data Retention Waveform
3.0V
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalentto:
THEVENIN
EQUIVALENT
R
TH
ALL INPUT PULSES
R1
V
CC(min)
t
R
V
CC(min)
t
CDR
V
DR
> 2.0V
DATA RETENTION MODE
V
CC
CE
Note
11. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μ
s or stable at V
CC(min)
> 100
μ
s.
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