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參數(shù)資料
| 型號： | CY62148DV30L |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 4-Mb (512K x 8) MoBL Static RAM |
| 中文描述： | 4 MB的（為512k × 8）的MoBL靜態(tài)RAM |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 195K |
| 代理商： | CY62148DV30L |
CY62148DV30
Document #: 38-05341 Rev. *B
Page 6 of 11
Notes:
16. Address valid prior to or coincident with CE transition LOW.
17. Data I/O is high impedance if OE = V
.
18. During this period, the I/Os are in output state and input signals should not be applied.
19. If CE goes HIGH simultaneously with WE HIGH, the output remains in high-impedance state.
Switching Waveforms
(continued)
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
I
CC
I
SB
t
HZOE
t
HZCE
t
PD
OE
CE
HIGH
V
SUPPLY
CURRENT
Read Cycle No. 2 (OE Controlled)
[15, 16]
ADDRESS
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
DATA I/O
ADDRESS
CE
WE
OE
t
HZOE
DATA
IN
VALID
NOTE
Write Cycle No. 1 (WE Controlled)
[17, 19]
18
t
SCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62148DV30L-55BVI | 4-Mb (512K x 8) MoBL Static RAM |
| CY62148DV30L-55BVXI | 4-Mb (512K x 8) MoBL Static RAM |
| CY62148DV30L-55SXI | 4-Mb (512K x 8) MoBL Static RAM |
| CY62148DV30L-55ZSXI | 4-Mb (512K x 8) MoBL Static RAM |
| CY62148DV30L-70BVI | 4-Mb (512K x 8) MoBL Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62148DV30L-55BVI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mb (512K x 8) MoBL Static RAM |
| CY62148DV30L-55BVXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mb (512K x 8) MoBL Static RAM |
| CY62148DV30L-55SXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62148DV30L-55SXIT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62148DV30L-55ZSXI | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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