參數(shù)資料
型號： CY62148DV30L
廠商： Cypress Semiconductor Corp.
英文描述： 4-Mb (512K x 8) MoBL Static RAM
中文描述： 4 MB的（為512k × 8）的MoBL靜態(tài)RAM
文件頁數(shù)： 3/11頁
文件大?。?/td> 195K
代理商： CY62148DV30L
CY62148DV30
Document #: 38-05341 Rev. *B
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground
Potential........................................ –0.3V to V
CC(MAX)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[4,5]
......................... –0.3V to V
CC(MAX)
+ 0.3V
Product Portfolio
DC Input Voltage
[4,5]
......................–0.3V to V
CC(MAX)
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Product
Range
Industrial –40°C to +85°C 2.2V to 3.6V
Ambient
Temperature
V
CC
[6]
CY62148DV30L
CY62148DV30LL
Product
V
CC
Range (V)
Typ.
[7]
3.0
3.0
3.0
3.0
Speed
(ns)
55
55
70
70
Power Dissipation
Operating I
CC
(mA)
f = 1 MHz
Typ.
[7]
Max.
1.5
3
3
1.5
3
3
Standby I
SB2
(uA)
Typ.
[7]
2
f = f
max
Min.
2.2
2.2
2.2
2.2
Max.
3.6
3.6
3.6
3.6
Typ.
[7]
8
Max.
15
10
15
10
Max.
12
8
12
8
CY62148DV30L
CY62148DV30LL
CY62148DV30L
CY62148DV30LL
Electrical Characteristics
Over the Operating Range
8
2
Parameter
V
OH
Description
Output HIGH Voltage
Test Conditions
V
CC
= 2.20V
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
CY62148DV30-55
Min. Typ.
[7]
2.0
2.4
CY62148DV30-70
Min. Typ.
[7]
2.0
2.4
Unit
V
V
V
V
Max.
Max.
I
OH
= –0.1 mA
V
CC
= 2.70V
V
CC
= 2.20V
V
CC
= 2.70V
V
OL
Output LOW Voltage
0.4
0.4
0.4
0.4
V
IH
Input HIGH Voltage
1.8
2.2
–0.3
–0.3
–1
–1
V
CC
+ 0.3V 1.8
V
CC
+ 0.3V 2.2
0.6
0.8
+1
+1
V
CC
+ 0.3V V
V
CC
+ 0.3V V
0.6
0.8
+1
+1
V
IL
Input LOW Voltage
–0.3
–0.3
–1
–1
V
V
μ
A
μ
A
I
IX
I
OZ
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
V
CC
Operating Supply
Current
GND < V
O
< V
CC
, Output Disabled
I
CC
f = f
MAX
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
L
LL
L
LL
L
LL
8
15
10
3
8
15
10
3
mA
mA
mA
mA
μ
A
f = 1 MHz
1.5
1.5
I
SB1
Automatic CE
Power-down
Current — CMOS
Inputs
Automatic CE
Power-down
Current — CMOS
Inputs
CE > V
CC
0.2V,
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and Data Only),
f = 0 (OE, and WE), V
CC
=3.60V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
2
12
8
2
12
8
I
SB2
L
LL
2
12
8
2
12
8
μ
A
Notes:
4.
5.
6.
7.
V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
V
= V
+0.75V for pulse durations less than 20 ns.
Full device AC operation assumes a 100
μ
s ramp time from 0 to V
(min) and 200
μ
s wait time after V
stabilization.
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
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