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參數(shù)資料
| 型號(hào)： | CY62148DV30 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 4-Mb (512K x 8) MoBL Static RAM(4-Mb(512K x 8) MoBL靜態(tài)RAM) |
| 中文描述： | 4 MB的（為512k × 8）的MoBL靜態(tài)存儲(chǔ)器（4 MB的（為512k × 8）的MoBL靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 326K |
| 代理商： | CY62148DV30 |
CY62148DV30
Document #: 38-05341 Rev. *C
Page 6 of 10
Read Cycle No. 2 (OE Controlled)
[15, 16]
Write Cycle No. 1 (WE Controlled)
[17, 19]
Notes:
16.Address valid prior to or coincident with CE transition LOW.
17.Data I/O is high impedance if OE = V
.
18.During this period, the I/Os are in output state and input signals should not be applied.
19.If CE goes HIGH simultaneously with WE HIGH, the output remains in high-impedance state.
Switching Waveforms
(continued)
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
I
CC
I
SB
t
HZOE
t
HZCE
t
PD
OE
CE
HIGH
V
SUPPLY
CURRENT
ADDRESS
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
DATA I/O
ADDRESS
CE
WE
OE
t
HZOE
DATA
IN
VALID
NOTE
18
t
SCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62148EV30 | 4-Mbit (512K x 8) Static RAM |
| CY62148EV30LL | 4-Mbit (512K x 8) Static RAM |
| CY62148EV30LL-45BVXI | 4-Mbit (512K x 8) Static RAM |
| CY62148EV30LL-45ZSXI | 4-Mbit (512K x 8) Static RAM |
| CY62148EV30LL-55SXI | 4-Mbit (512K x 8) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62148DV30_07 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) MoBL㈢ Static RAM |
| CY62148DV30_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) MoBL Static RAM |
| CY62148DV30L | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8) MoBL㈢ Static RAM |
| CY62148DV30L-55BVI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mb (512K x 8) MoBL Static RAM |
| CY62148DV30L-55BVXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mb (512K x 8) MoBL Static RAM |
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