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參數(shù)資料
| 型號： | CY62148DV30 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 4-Mb (512K x 8) MoBL Static RAM(4-Mb(512K x 8) MoBL靜態(tài)RAM) |
| 中文描述： | 4 MB的（為512k × 8）的MoBL靜態(tài)存儲器（4 MB的（為512k × 8）的MoBL靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 326K |
| 代理商： | CY62148DV30 |
CY62148DV30
Document #: 38-05341 Rev. *C
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground
Potential........................................ –0.3V to V
CC(MAX)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[4,5]
......................... –0.3V to V
CC(MAX)
+ 0.3V
DC Input Voltage
[4,5]
..................... –0.3V to V
CC(MAX)
+ 0.3V
Electrical Characteristics
Over the Operating Range
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Product
Range
Industrial
Ambient
Temperature
–40°C to +85°C 2.2V to
V
CC
[6]
CY62148DV30L
CY62148DV30LL
CY62148DV30LL Automotive-A –40°C to +85°C
3.6V
Parameter
V
OH
Description
Output HIGH
Voltage
Test Conditions
V
CC
= 2.20V
V
CC
= 2.70V
V
CC
= 2.20V
V
CC
= 2.70V
–55
–70
Unit
V
V
V
V
V
Min. Typ.
[7]
2.0
2.4
Max.
Min. Typ.
[7]
2.0
2.4
Max.
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
CC
= 2.2V to 2.7V
V
OL
Output LOW
Voltage
0.4
0.4
V
CC
+
0.3V
V
CC
+
0.3V
0.6
0.8
+1
0.4
0.4
V
CC
+
0.3V
V
CC
+
0.3V
0.6
0.8
+1
V
IH
Input HIGH
Voltage
1.8
1.8
V
CC
= 2.7V to 3.6V
2.2
2.2
V
V
IL
Input LOW
Voltage
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
GND < V
I
< V
CC
–0.3
–0.3
–1
–0.3
–0.3
–1
V
V
μ
A
I
IX
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
I
OZ
GND < V
O
< V
CC
, Output Disabled
–1
+1
–1
+1
μ
A
I
CC
f = f
MAX
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
Ind’l
Ind’l
Auto-A LL
Ind’l
Ind’l
Auto-A LL
Ind’l
Ind’l
Auto-A LL
L
LL
8
8
15
10
mA
mA
mA
mA
mA
mA
μ
A
8
8
10
10
f = 1 MHz
L
LL
1.5
1.5
3
3
1.5
1.5
3
3
I
SB1
Automatic CE
Power-down
Current —
CMOS Inputs
Automatic CE
Power-down
Current —
CMOS Inputs
CE > V
CC
0.2V, V
IN
>V
CC
–0.2V,
V
IN
<0.2V)
f = f
MAX
(Address and Data Only),
f = 0 (OE, and WE), V
CC
=3.60V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
L
LL
2
2
12
8
2
2
8
8
I
SB2
Ind’l
Ind’l
Auto-A LL
L
LL
2
2
12
8
μ
A
2
2
8
8
Notes:
4. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
5. V
= V
+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
μ
s ramp time from 0 to V
(min) and 200
μ
s wait time after V
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
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