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參數(shù)資料
| 型號： | CY62146EV30LL |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 4-Mbit (256K x 16) Static RAM |
| 中文描述： | 4兆位（256K × 16）靜態(tài)RAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 440K |
| 代理商： | CY62146EV30LL |
CY62146EV30 MoBL
4-Mbit (256K x 16) Static RAM
Cypress Semiconductor Corporation
Document #: 38-05567 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 26, 2007
Features
Very high speed: 45 ns
Wide voltage range: 2.20V–3.60V
Pin compatible with CY62146DV30
Ultra low standby power
— Typical standby current: 1
μ
A
— Maximum standby current: 7
μ
A
Ultra low active power
— Typical active current: 2 mA @ f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Available in a Pb-free 48-ball VFBGA and 44-pin TSOP II
packages
Functional Description
[1]
The CY62146EV30 is a high performance CMOS static RAM
organized as 256K words by 16 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life (MoBL
) in
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption by 80% when addresses are not
toggling. The device can also be put into standby mode
reducing power consumption by more than 99% when
deselected (CE HIGH). The input and output pins (IO
0
through
IO
15
) are placed in a high impedance state when:
Deselected (CE HIGH)
Outputs are disabled (OE HIGH)
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
Write operation is active (CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW,
then data from IO pins (IO
0
through IO
7
), is written into the
location specified on the address pins (A
0
through A
17
). If Byte
High Enable (BHE) is LOW, then data from IO pins (IO
8
through IO
15
) is written into the location specified on the
address pins (A
0
through A
17
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO
0
to IO
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
8
to IO
15
. See the
“Truth Table” on page 9
for a
complete description of read and write modes.
Product Portfolio
Product
V
CC
Range (V)
Speed
(ns)
Power Dissipation
Operating I
CC
(mA)
Standby I
SB2
(
μ
A)
f = 1 MHz
f = f
max
Min
Typ
[2]
Max
Typ
[2]
Max
Typ
[2]
Max
Typ
[2]
Max
CY62146EV30LL
2.2
3.0
3.6
45 ns
2
2.5
15
20
1
7
Notes:
1. For best practice recommendations, please refer to the Cypress application note
System Design Guidelines
on
http://www.cypress.com
.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25°C.
[+] Feedback
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY62146EV30LL-45BVXI | 功能描述:靜態(tài)隨機存取存儲器 4M Ultra LO Pwr HI SPD Micropwr IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62146EV30LL-45BVXIT | 功能描述:靜態(tài)隨機存取存儲器 4M Ultra LO Pwr HI SPD Micropwr IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62146EV30LL-45ZSXA | 功能描述:靜態(tài)隨機存取存儲器 4-Mb 256K x 16 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62146EV30LL-45ZSXAT | 功能描述:靜態(tài)隨機存取存儲器 4 Mb 256Kb x 16 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62146EV30LL45ZSXI | 制造商:Cypress Semiconductor 功能描述: |
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