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參數(shù)資料
| 型號： | CY62138FV30 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mbit (256K x 8) Static RAM |
| 中文描述： | 2兆位（256K × 8）靜態(tài)RAM |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 930K |
| 代理商： | CY62138FV30 |
Document #: 001-08029 Rev. *E
Page 4 of 13
CY62138FV30 MoBL
Thermal Resistance
[8]
Parameter
Θ
JA
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Still air, soldered on a 3 x 4.5
inch, two layer printed circuit
board
SOIC
44.53
VFBGA
38.49
TSOP II
44.16
STSOP
59.72
TSOP I
50.19
Unit
°
C/W
Θ
JC
24.05
17.66
11.97
15.38
14.59
°
C/W
AC Test Loads and Waveforms
Parameters
R1
R2
R
TH
V
TH
2.5V (2.2V to 2.7V)
16667
15385
8000
1.20
3.0V (2.7V to 3.6V)
1103
1554
645
1.75
Unit
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions
Min
Typ
[3]
Max
Unit
V
DR
I
CCDR [7]
V
CC
for Data Retention
Data Retention Current
1.5
V
V
CC
= 1.5V,
CE
1
> V
CC
0.2V or CE
2
< 0.2V,
V
IN
> V
CC
0.2V or V
IN
< 0.2V
1
4
μ
A
t
CDR [8]
t
R [9]
Chip Deselect to Data Retention Time
0
ns
Operation Recovery Time
t
RC
ns
Data Retention Waveform
[10]
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalentto:
THEVENIN
EQUIVALENT
R
TH
ALL INPUT PULSES
R1
V
CC(min)
t
R
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
V
CC
CE
Notes:
9. Full device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μ
s or stable at V
CC(min)
> 100
μ
s.
10.CE is the logical combination of CE
1
and CE
2
. When CE
1
is LOW and CE
2
is HIGH, CE is LOW; when CE
1
is HIGH or CE
2
is LOW, CE is HIGH.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62138FV30_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256K x 8) Static RAM |
| CY62138FV30_10 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256K x 8) Static RAM |
| CY62138FV30_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256 K x 8) Static RAM Automatic power down when deselected |
| CY62138FV30LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256K x 8) Static RAM |
| CY62138FV30LL-45BVXI | 功能描述:靜態(tài)隨機存取存儲器 SLO 5.0V SUPER LO PWR 128Kx16 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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