參數(shù)資料
型號(hào)： CY62138FV30
廠商： Cypress Semiconductor Corp.
英文描述： 2-Mbit (256K x 8) Static RAM
中文描述： 2兆位（256K × 8）靜態(tài)RAM
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 930K
代理商： CY62138FV30
Document #: 001-08029 Rev. *E
Page 3 of 13
CY62138FV30 MoBL
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground
Potential........................................................... –0.3V to 3.9V
DC Voltage Applied to Outputs
in High-Z State
[4, 5]
.......................................... –0.3V to 3.9V
DC Input Voltage
[4, 5]
.......................................–0.3V to 3.9V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Product
Range
Ambient
Temperature
V
CC
[6]
CY62138FV30LL
Industrial –40°C to +85°C 2.2V to 3.6V
Electrical Characteristics
(Over the Operating Range)
Parameter
Description
Test Conditions
45 ns
Typ
[3]
Unit
Min
Max
V
OH
Output HIGH Voltage
I
OH
= –0.1 mA
I
OH
= –1.0 mA, V
CC
> 2.70V
I
OL
= 0.1 mA
I
OL
= 2.1 mA, V
CC
> 2.70V
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.2V to 2.7V For BGA package
V
CC
= 2.7V to 3.6V
V
CC
= 2.2V to 3.6V For other packages
GND < V
I
< V
CC
GND < V
O
< V
CC
,
output disabled
2.0
V
2.4
V
V
OL
Output LOW Voltage
0.4
V
0.4
V
V
IH
Input HIGH Voltage
1.8
V
CC
+ 0.3V
V
CC
+ 0.3V
0.6
V
2.2
V
V
IL
Input LOW Voltage
–0.3
V
–0.3
0.8
V
–0.3
0.6
V
μ
A
μ
A
I
IX
I
OZ
Input Leakage Current
–1
+1
Output Leakage Current
–1
+1
I
CC
V
CC
Operating Supply Current f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
13
18
mA
f = 1 MHz
1.6
2.5
I
SB1
Automatic CE Power Down
Current CMOS Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V),
f = f
max
(address and data only),
f = 0 (OE, and WE), V
CC
= 3.60V
1
5
μ
A
I
SB2 [7]
Automatic CE Power Down
Current CMOS Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
1
5
μ
A
Capacitance
(For all packages)
[8]
Parameter
C
IN
C
OUT
Description
Test Conditions
Max
10
10
Unit
pF
pF
Input Capacitance
Output Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ.)
Notes
4. V
IL(min)
=
–
2.0V for pulse durations less than 20 ns.
5. V
IH(max)
= V
CC
+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
μ
s ramp time from 0 to V
CC
(min) and 200
μ
s wait time after V
CC
stabilization.
7. Only chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
8. Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62138FV30_09 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256K x 8) Static RAM
CY62138FV30_10 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256K x 8) Static RAM
CY62138FV30_11 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256 K x 8) Static RAM Automatic power down when deselected
CY62138FV30LL 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2-Mbit (256K x 8) Static RAM
CY62138FV30LL-45BVXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 5.0V SUPER LO PWR 128Kx16 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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